M29DW323DB价格

参考价格:¥12.5816

型号:M29DW323DB70N6E 品牌:Micron 备注:这里有M29DW323DB多少钱,2025年最近7天走势,今日出价,今日竞价,M29DW323DB批发/采购报价,M29DW323DB行情走势销售排行榜,M29DW323DB报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M29DW323DB

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M29DW323DB

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

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FLASHNORHIGHDENSITY&CONSUMER

FamilyOverview ➤Densitiesfrom32Mbto64Mb ➤0.15µmprocesstechnology ➤Wideapplicationareacovered ➤technologyshrinkongoing ➤higherdensities ➤improvedperformances ➤Increasedreliability MainFeatures ➤32Mb(4Mbx8/2Mbx16),BootBlock ➤AccessTime

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M29DW323DB产品属性

  • 类型

    描述

  • 型号

    M29DW323DB

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    32 Mbit(4Mb x8 or 2Mb x16, Dual Bank

  • 8

    24, Boot Block) 3V Supply Flash Memory

更新时间:2025-6-23 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
标准封装
9548
全新原装正品/价格优惠/质量保障
ST
2016+
TSSOP48
6600
只做原装,假一罚十,公司可开17%增值税发票!
ST
24+
TSOP48
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
23+
TSOP48
280000
专注原装正品现货特价中量大可定
Micron
2450+
TSOP48
6541
只做原装正品假一赔十为客户做到零风险!!
MICRON/美光
18+
TSOP48
161
原装现货 价格优势
ST/意法
23+
QFN
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
24+
TSSOP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
STM
23+
NA
3210
专做原装正品,假一罚百!
MICRON/镁光
23+
TSOP48
12500
专营美光原装现货

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