M29DW323价格

参考价格:¥12.5816

型号:M29DW323DB70N6E 品牌:Micron 备注:这里有M29DW323多少钱,2025年最近7天走势,今日出价,今日竞价,M29DW323批发/采购报价,M29DW323行情走势销售排行榜,M29DW323报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M29DW323

FLASHNORHIGHDENSITY&CONSUMER

FamilyOverview ➤Densitiesfrom32Mbto64Mb ➤0.15µmprocesstechnology ➤Wideapplicationareacovered ➤technologyshrinkongoing ➤higherdensities ➤improvedperformances ➤Increasedreliability MainFeatures ➤32Mb(4Mbx8/2Mbx16),BootBlock ➤AccessTime

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYX

numonyx

NUMONYX

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M29DW323产品属性

  • 类型

    描述

  • 型号

    M29DW323

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    FLASH NOR HIGH DENSITY & CONSUMER

更新时间:2025-7-30 14:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
22+
BGA
2000
原装正品现货
ST
25+
BGA
3200
全新原装、诚信经营、公司现货销售!
ST
20+
TSSOP
2960
诚信交易大量库存现货
ST
23+
SOP
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
ST
24+
TSOP48
5000
原厂授权代理 价格绝对优势
MICRON/美光
21+
SOP
7000
正品渠道现货,终端可提供BOM表配单。
23+
TSOP48
280000
专注原装正品现货特价中量大可定
MICRON/美光
2021+
BGA48
9000
原装现货,随时欢迎询价
ST
2020+
BGA
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
MICRON/镁光
23+
TSOP48
12500
专营美光原装现货

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