64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

封装/外壳：64-TFBGA 包装：托盘 描述：IC FLASH 64MBIT PARALLEL 64TFBGA 集成电路（IC） 存储器

IC FLASH 64M PARALLEL 64TFBGA

IC FLASH 64M PARALLEL 64TFBGA

封装/外壳：64-TFBGA 包装：卷带（TR） 描述：IC FLASH 64MBIT PARALLEL 64TFBGA 集成电路（IC） 存储器

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt