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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I | STMICROELECTRONICS 意法半导体 |   | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | |
M28W640EC产品属性
- 类型
描述
- 型号
M28W640EC
- 功能描述
闪存 WIRELESS FLASH
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
24+ |
TSOP |
5760 |
MICRON专营原装进口现货 |
|||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST |
原厂封装 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
24+ |
BGA |
6310 |
全新原装现货,欢迎询购!! |
|||
ST |
24+ |
TBGA64 |
9700 |
绝对原装正品现货假一罚十 |
|||
STMICROELECTE |
23+ |
TBGA64 |
28000 |
原装正品价格优惠,长期优势供应 |
|||
MICRON/美光 |
22+ |
NA |
3000 |
支持任何机构检测 只做原装正品 |
|||
STMICROELECT |
05+ |
原厂原装 |
4298 |
只做全新原装真实现货供应 |
M28W640EC芯片相关品牌
M28W640EC规格书下载地址
M28W640EC参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640FST70ZA6
- M28W640FSB7KZA6F
- M28W640FSB7KZA6E
- M28W640FSB70ZA6F
- M28W640FSB70ZA6E
- M28W640FCT70ZB6E
- M28W640FCT70N6F
- M28W640FCT70N6E
- M28W640FCB70ZB6F
- M28W640FCB70ZB6E
- M28W640FCB70N6F
- M28W640FCB70N6E
- M28W640FCB70N6
- M28W640ECT70ZB6T
- M28W640ECT70ZB6
- M28W640ECT70N6T
- M28W640ECT70N6
- M28W640ECB90N6
- M28W640ECB70ZB6
- M28W640ECB70N6
- M28W640CT90N6
- M28W640CB90N6
- M28W640
- M28W320HSU70ZA6F
- M28W320HSU70ZA6E
- M28W320HSU70ZA6
- M28W320HSU70D11
- M28W320HST70ZB6E
- M28W320HST70ZA6F
- M28W320HST70ZA6E
- M28W320HSB70ZB6E
- M28W320HSB70ZA6F
- M28W320HSB70ZA6E
- M28W320HCT70D16
- M28W320HCB70D11
- M28W320FSU7KZA6F
- M28W320FSU7KZA6E
- M28W320FSU70ZB6F
- M28W320FSU70ZB6E
- M28W320FSU70ZA6T
- M28W320FSU70ZA6F
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
- M28S-B
- M28S_15
- M28S_13
- M28S_11
- M28N-1
- M28LV64
- M28LV16
- M28F512
- M28F420
- M28F410
- M28F256
- M28F201
- M28F101
M28W640EC数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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