型号 功能描述 生产厂家 企业 LOGO 操作
M28W320FSU

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

M28W320FSU

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

STMICROELECTRONICS

意法半导体

M28W320FSU产品属性

  • 类型

    描述

  • 型号

    M28W320FSU

  • 制造商

    Micron Technology Inc

  • 功能描述

    PARALLEL NOR - Trays

更新时间:2025-12-30 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
M28W320FSU70ZA6
25+
470
470
ST/意法
24+
TBGA
9000
只做原装,欢迎询价,量大价优
ST
17+
TBGA64
6200
100%原装正品现货
ST/意法
2450+
BGA
6540
只做原装正品现货!或订货假一赔十!
ST
2025+
TBGA64
3685
全新原厂原装产品、公司现货销售
ST
23+
TBGA
5000
原装正品,假一罚十
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST
25+
BGA
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST/意法
24+
TBGA64
9600
原装现货,优势供应,支持实单!
ST
16+
QFP
4000
进口原装现货/价格优势!

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