型号 功能描述 生产厂家&企业 LOGO 操作
M28W320FSU

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M28W320FSU产品属性

  • 类型

    描述

  • 型号

    M28W320FSU

  • 制造商

    Micron Technology Inc

  • 功能描述

    PARALLEL NOR - Trays

更新时间:2025-8-5 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
ST
2020+
BGA
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
07+
TBGA
882
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
23+
BGA
8560
受权代理!全新原装现货特价热卖!
ST/意法
24+
TBGA
9000
只做原装,欢迎询价,量大价优
ST/意法
2021+
TBGA
9000
原装现货,随时欢迎询价
ST
17+
TBGA64
6200
100%原装正品现货
ST
24+
BGA
23000
免费送样原盒原包现货一手渠道联系
M28W320FSU70ZA6
470
470
ST/意法
2023+
TBGA
6893
专注全新正品,优势现货供应

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