32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W320B is a 32 Mbit (2 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

DESCRIPTION The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by Word basis. The device is offered in the TSOP48 (10 x 20mm) and the µBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320C a