位置：首页 > IC中文资料第2723页 > M28W160CT70N6F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160CT70N6F | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 |   | |
M28W160CT70N6F | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | |
M28W160CT70N6F | SLC 16M X16 TSOP | Micron 美光 | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：散装 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | |
M28W160CT70N6F产品属性
- 类型
描述
- 型号
M28W160CT70N6F
- 制造商
Micron Technology Inc
- 功能描述
PARALLEL NOR - Tape and Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
micron(镁光) |
24+ |
标准封装 |
25048 |
全新原装正品/价格优惠/质量保障 |
|||
STM |
20+ |
TSSOP-48 |
2960 |
诚信交易大量库存现货 |
|||
MICRON美光 |
24+ |
BGA QFP |
13500 |
免费送样原盒原包现货一手渠道联系 |
|||
MICRON/镁光 |
15+ |
TSOP-48 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
SOP |
576 |
正品原装--自家现货-实单可谈 |
||||
ST |
25+ |
BGA |
18000 |
原厂直接发货进口原装 |
|||
ST |
24+ |
BGA |
3000 |
公司存货 |
|||
Micron |
17+ |
6200 |
|||||
MICRON |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
MICRON/美光 |
23+ |
9920 |
原装正品，支持实单 |
M28W160CT70N6F芯片相关品牌
M28W160CT70N6F规格书下载地址
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M28W160CT70N6F数据表相关新闻
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DdatasheetPDF页码索引
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