16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：散装 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成电路（IC） 存储器