位置：首页 > IC中文资料第1460页 > M28W160CB70N6F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160CB70N6F | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 |   | |
M28W160CB70N6F | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | |
M28W160CB70N6F | SLC 16M X16 TSOP | MICRON 美光 | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | ||
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | |
M28W160CB70N6F产品属性
- 类型
描述
- 型号
M28W160CB70N6F
- 功能描述
闪存 STD FLASH 16 MEG
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron Technology Inc. |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
ST(意法) |
25+ |
N/A |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
MICRON/美光 |
2450+ |
TSOP48 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Micron |
17+ |
6200 |
|||||
MICRON |
22+ |
TSOP48 |
20000 |
公司只有原装 品质保障 |
|||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ST/Numony |
24+ |
TSOP-48 |
7150 |
绝对原装现货,价格低,欢迎询购! |
|||
MICRON |
23+ |
TSOP48 |
142 |
全新原装正品现货,支持订货 |
|||
ST(意法) |
2511 |
5904 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
MICRON/美光 |
23+ |
TSOP48 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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