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M28W160CB70N6价格
参考价格：￥8.2081
型号：M28W160CB70N6E 品牌：Micron 备注：这里有M28W160CB70N6多少钱，2025年最近7天走势，今日出价，今日竞价，M28W160CB70N6批发/采购报价，M28W160CB70N6行情走势销售排行榜，M28W160CB70N6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160CB70N6 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 |   | |
M28W160CB70N6 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX numonyx | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX numonyx | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX numonyx | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX numonyx | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX numonyx | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the | NUMONYX numonyx | | ||
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成电路（IC） 存储器 | ELPIDA 美光科技 | | ||
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 16MBIT PARALLEL 48TSOP 集成电路（IC） 存储器 | ELPIDA 美光科技 | |
M28W160CB70N6产品属性
- 类型
描述
- 型号
M28W160CB70N6
- 功能描述
闪存 16M(1Mx16) 70ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/镁光 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
ST/Numony |
24+ |
TSOP-48 |
7150 |
绝对原装现货,价格低,欢迎询购! |
|||
ST/Numony |
23+ |
TSOP48 |
632 |
深圳市拓亿芯电子公司,全新原装现货 |
|||
MICRON美光 |
24+ |
BGA QFP |
13500 |
免费送样原盒原包现货一手渠道联系 |
|||
ST |
18+ |
TSOP |
85600 |
保证进口原装可开17%增值税发票 |
|||
ST |
2021+ |
TSOP48 |
9450 |
原装现货。 |
|||
ST/意法 |
22+ |
TSOP-48 |
3000 |
原装正品,支持实单 |
|||
ST |
23+ |
TSSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
2025+ |
TSOP |
3505 |
全新原厂原装产品、公司现货销售 |
|||
MICRON/ST |
2023+ |
TSOP-48 |
53500 |
正品,原装现货 |
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M28W160CB70N6规格书下载地址
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