位置：首页 > IC中文资料第6139页 > M28W160B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M28W160B | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 |   | |
M28W160B | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | |
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | | ||
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/ | STMICROELECTRONICS 意法半导体 | |
M28W160B产品属性
- 类型
描述
- 型号
M28W160B
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAXIC |
23+24 |
N.SO |
27960 |
原装现货.优势热卖.终端BOM表可配单 |
|||
ST |
25+ |
BGA46 |
16900 |
原装，请咨询 |
|||
ST/意法 |
24+ |
BGA48 |
9600 |
原装现货,优势供应,支持实单! |
|||
SST |
23+ |
TSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SST |
23+ |
TSOP |
7685 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
20+ |
TSSOP |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
25+ |
BGA46 |
738 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
|||
ST |
25+23+ |
SSOP-48 |
36215 |
绝对原装正品全新进口深圳现货 |
|||
ST |
25+ |
BGA |
2140 |
全新原装!现货特价供应 |
|||
ST |
24+ |
BGA |
6980 |
原装现货,可开13%税票 |
M28W160B规格书下载地址
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