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位置：首页 > IC中文资料第6139页 > M28W160B

型号 功能描述 生产厂家&企业 LOGO 操作
M28W160B

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB1006T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB100GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB100-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB100ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB706T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB70GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB70-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB70ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB856T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB85GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB85-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB85ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB906T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB90GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB90-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BB90ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160B-GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT1006T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT100GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT100-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT100ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT706T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT70GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT70-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT70ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT856T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT85GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT85-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT85ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT906T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT90GBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT90-NT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160BT90ZB1T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M28W160B-ZBT

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Bisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivetheI/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M28W160B产品属性

  • 类型

    描述

  • 型号

    M28W160B

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160B供应商更多...

更新时间：2025-7-22 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
艾睿（深圳）半导体有限公司
M28W160BT100ZB6
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
海芯未来半导体电子（深圳）有限公司
M28W160BT100ZB6T
ST
25+
BGA
4512
只做原装进口!正品支持实单!
询价
深圳市创新迹电子有限公司
M28W160B-100N1
ST/意法
22+
TSSOP
25000
只做原装,一站式BOM配单,假一罚十
询价
深圳市佳鑫美电子科技有限公司
M28W160BT-100GB6
ST
24+
BGA
2140
全新原装!现货特价供应
询价
深圳市富诚威科技有限公司
M28W160BT-90N6
ST
24+
TSOP
7500
十年品牌!原装现货!!!
询价
深圳市欧亚佳电子有限公司
M28W160BT-90N6
SST
20+
TSOP
11520
特价全新原装公司现货
询价
深圳市宏世佳电子科技有限公司
M28W160B-100N1
ST
2025+
TSSOP
3715
全新原厂原装产品、公司现货销售
询价
深圳市英科美电子有限公司
M28W160BT90GB6
ST/意法
2223+
TFBGA
26800
只做原装正品假一赔十为客户做到零风险
询价
上海鑫科润电子科技有限公司
M28W160BT100ZB6
ST
03+
BGA
32
原装现货海量库存欢迎咨询
询价
深圳市澳亿芯电子科技有限公司
M28W160BT-90N6
原厂
13+
IC
1
普通
询价

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