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M28W160B-GBT中文资料

厂家型号

M28W160B-GBT

文件大小

337.77Kbytes

页面数量

45

功能描述

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory

数据手册

下载地址一下载地址二到原厂下载

简称

STMICROELECTRONICS意法半导体

生产厂商

STMicroelectronics

中文名称

意法半导体集团官网

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M28W160B-GBT数据手册规格书PDF详情

SUMMARY DESCRIPTION

The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 6, Block Addresses.

Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK PROTECTION on TWO PARAMETER BLOCKS

– WP for Block Protection

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W160BT: 90h

– Bottom Device Code, M28W160BB: 91h

M28W160B-GBT产品属性

  • 类型

    描述

  • 型号

    M28W160B-GBT

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory

更新时间:2025-6-20 15:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST
24+
BGA
5110
ST
23+
BGA
20000
全新原装热卖/假一罚十!更多数量可订货
ST
24+
BGA
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
21+
BGA
23480
ST
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
ST
23+
BGA
3480
正品原装货价格低
ST
2016+
BGA
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
ST/意法
23+
TFBGA
50000
全新原装正品现货,支持订货

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STMicroelectronics 意法半导体集团

中文资料: 161474条

意法半导体 (STMicroelectronics) 成立于1987年,总部位于瑞士日内瓦和法国巴黎,是一家全球领先的半导体公司。意法半导体专注于设计、制造和销售各种半导体解决方案,产品广泛应用于汽车、工业、消费电子、通信等领域。 意法半导体的产品包括微控制器、模拟集成电路、功率半导体、传感器等。公司拥有多个研发中心和生产基地,致力于技术创新和研发投入。意法半导体在全球范围内拥有广泛的客户群和合作伙伴,为客户提供高品质的产品和解决方案。 公司的使命是通过半导体技术推动智能化和可持续发展,助力客户取得成功。意法半导体不仅注重商业成功,还注重社会责任、环境保护和可持续经营。企业价值观包括创新、尊重