16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection

DESCRIPTION The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics’ proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply. ■Fast A

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C17A is a CMOS 16K nonvolatile electrically Erasable PROM. The 28C17A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched internally, freeing the m

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K-Bit CMOS PARALLEL E2PROM

DESCRIPTION The CAT28C17A is a fast, low power, 5V-only CMOS parallel EEPROM organized as 2K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional t