位置：首页 > IC中文资料第5450页 > M28C17
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M28C17 | 16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kbx8ParallelEEPROM DESCRIPTION TheM28C16AandM28C17Aare2Kx8lowpowerParallelEEPROMfabricatedwithSTMicroelectronicsproprietarysinglepolysiliconCMOStechnology.Thedeviceoffersfastaccesstimewithlowpower dissipationandrequiresa5Vor3Vpowersupply. FASTACCESSTIME: –150nsat5V | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16Kbit2Kx8ParallelEEPROMWithSoftwareDataProtection DESCRIPTION TheM28C16BandM28C17Bdevicesconsistof2048x8bitsoflowpower,parallelEEPROM,fabricatedwithSTMicroelectronics’proprietarysinglepolysiliconCMOStechnology.Thedevicesofferfastaccesstime,withlowpowerdissipation,andrequireasinglevoltagesupply. ■FastA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
16K2Kx8PARALLELEEPROMwithSOFTWAREDATAPROTECTION DESCRIPTION TheM28C17isa2Kx8lowpowerParallelEEPROMfabricatedwithSGS-THOMSONprorietarysinglepolysiliconCMOStechnology.Theeviceoffersfastaccesstimewithlowpowerdisipationandrequiresa5Vpowersupply.TheM28C17offersthesamefeaturesthantheM28C16,inadditionto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M28C17产品属性
- 类型
描述
- 型号
M28C17
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
PLCC32 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
SO-28 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
ST |
05+ |
原厂原装 |
7301 |
只做全新原装真实现货供应 |
|||
ST |
23+ |
SOP-28 |
38000 |
正品原装货价格低 |
|||
ST意法 |
20+ |
SOP28 |
6588 |
||||
ST |
24+ |
SOP-28 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
24+ |
粒 |
10000 |
自己现货 |
|||
STM |
23+ |
PLCC-32 |
9526 |
||||
ST |
24+ |
SO-28 |
3200 |
十年品牌!原装现货!!! |
|||
ST/意法 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
M28C17芯片相关品牌
M28C17规格书下载地址
M28C17参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M28S_15
- M28S_13
- M28S_11
- M28N-1
- M28LV64
- M28LV16
- M28F512
- M28F420
- M28F410
- M28F256
- M28F201
- M28F101
- M28F010
- M28F008
- M28C64X
- M28C64C
- M28C64
- M28C256
- M28C17B
- M28C17A
- M28C17-20BS6
- M28C17-15WNS6
- M28C17-15WMS6
- M28C17-15WKA6
- M28C17-15WBS6
- M28C17-15NS6
- M28C17-15MS6
- M28C17-15KA6
- M28C17-15BS6
- M28C17-150WK6TR
- M28C17-120WK6TR
- M28C17-120WK1TR
- M28C17-120P6T
- M28C17-120P1T
- M28C17-120MS6T
- M28C17-120MS1T
- M28C17-120K6TR
- M28C17-120K6T
- M28C17-120K1TR
- M28C17-120K1T
- M28C16B
- M28C16A
- M28C16-90WK1TR
- M28C16-90P6T
- M28C16-90P1T
- M28C16-90N6T
- M28C16-90N1T
- M28C16-90MS6T
- M28C16-90MS1T
- M28C16-90K6TR
- M28C16-90K6T
- M28C16-90K1TR
- M28C16-90K1T
- M28C16-30WKA6
- M28C16-30WBS6
- M28C16-30NS6
- M28C16-30MS6
- M28C16-30KA6
- M28C16-30BS6
- M28C16-300P6T
- M28C16
- M28840
- M28758
- M28750
- M28258
- M28256
- M28250
- M28010
- M27W801
- M27W800
- M27W512
- M27W402
- M27W401
- M27W400
- M27W256
- M27W202
- M27W201
- M27W102
M28C17数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19M25P40-VMN6TPB 假一罚十
专业一系列芯片，只做原装正品，欢迎咨询谢谢！
2020-12-30M27C512-15F1 储存器 代理渠道 ，进口原装
M27C512-15F1 代理渠道，进口原装
2020-10-29M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
