M25PE10价格

参考价格:¥2.7978

型号:M25PE10-VMN6P 品牌:Micron 备注:这里有M25PE10多少钱,2025年最近7天走势,今日出价,今日竞价,M25PE10批发/采购报价,M25PE10行情走势销售排行榜,M25PE10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M25PE10

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

M25PE10

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Micron

美光

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

STMICROELECTRONICS

意法半导体

Serial NOR Flash

Micron

美光

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC FLASH 1MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:1MB 8PIN SOIC NARROW SOP2-8 150 集成电路(IC) 存储器

Alliance

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

文件:482.96 Kbytes Page:60 Pages

STMICROELECTRONICS

意法半导体

M25PE10产品属性

  • 类型

    描述

  • 型号

    M25PE10

  • 制造商

    Micron Technology Inc

  • 功能描述

    SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film

更新时间:2025-12-25 11:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2025+
SOP8
629
原装进口价格优 请找坤融电子!
NUMONYX
25+
SOP-8
5000
原装现货,特价销售!
Micron
23+
SO8N
7863
正规渠道,只有原装!
Micron
最新
SO8N
6800
全新原装公司现货低价
MICRON
24+
SOP-8
10000
MICRON专营原装进口现货
MICRON/美光
12+
SOP8
376
原装现货 价格优势
MICRON/镁光
25+
SOP8
12500
专营美光原装现货
MICRON/美光
24+
SOP8
45500
专供内存闪存单片机。只做原装
MICRON
26+
SOP8
360000
原装现货
MICRON
25+
SOP8
15000
原装现货

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