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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M25PE10-VMP6TG | 1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra | STMICROELECTRONICS 意法半导体 |   | |
M25PE10-VMP6TG | 1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | |
M25PE10-VMP6TG | 1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | |
M25PE10-VMP6TG | Serial NOR Flash | Micron 美光 | | |
封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 1MBIT 75MHZ 8VFDFPN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra | NUMONYX | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout 文件：482.96 Kbytes Page：60 Pages | STMICROELECTRONICS 意法半导体 | |
M25PE10-VMP6TG产品属性
- 类型
描述
- 型号
M25PE10-VMP6TG
- 功能描述
IC FLASH 1MBIT 75MHZ 8VFQFPN
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
Forté™
- 产品变化通告
Product Discontinuation 26/Apr/2010
- 标准包装
136
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步，DDR II
- 存储容量
18M（1M x 18）
- 速度
200MHz
- 接口
并联
- 电源电压
1.7 V ~ 1.9 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
165-TBGA
- 供应商设备封装
165-CABGA（13x15）
- 包装
托盘
- 其它名称
71P71804S200BQ
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
26+ |
SOP8 |
60000 |
只有原装 可配单 |
|||
ST |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
|||
MICRON/美光 |
22+ |
NA |
3000 |
支持任何机构检测 只做原装正品 |
|||
ST |
07+ |
8-VFQFN |
2000 |
现货 |
|||
ST |
21+ |
SOP |
10000 |
只做原装,质量保证 |
|||
ST/意法 |
2450+ |
SOP8 |
6540 |
原装现货或订发货1-2周 |
|||
Micron |
24+ |
36520 |
一级代理/放心采购 |
||||
Micron |
200 |
||||||
ST |
25+ |
SOP |
6000 |
原厂原装 欢迎询价 |
|||
ST |
24+ |
SOP |
30000 |
原装正品公司现货,假一赔十! |
M25PE10-VMP6TG芯片相关品牌
M25PE10-VMP6TG规格书下载地址
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M25PE10-VMP6TG数据表相关新闻
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2019-2-28
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