型号 功能描述 生产厂家&企业 LOGO 操作

Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors

DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea

STMICROELECTRONICS

意法半导体

Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors

DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea

STMICROELECTRONICS

意法半导体

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Cable (M/3xM), MFi Certified, Black, 6 ft. (1.8 m)

文件:176.7 Kbytes Page:3 Pages

TRIPPLITE

包装:散装 描述:METRIC ROUND STANDOFFPLAIN ALUMI 五金件,紧固件,配件 板垫片,支座

RAF

RAF ELECTRONIC HARDWARE

包装:散装 描述:METRIC ROUND STANDOFFBLACK ANODI 五金件,紧固件,配件 板垫片,支座

RAF

RAF ELECTRONIC HARDWARE

10 (105/30) AWG Bare Copper

文件:395.79 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

10 (105/30) AWG Bare Copper

文件:395.69 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

10 (105/30) AWG Bare Copper

文件:395.79 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

10 (105/30) AWG Bare Copper

文件:395.86 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

10 (105/30) AWG Bare Copper

文件:395.75 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

10 (105/30) AWG Bare Copper

文件:395.62 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

10 (105/30) AWG Bare Copper

文件:395.91 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

10 (105/30) AWG Bare Copper

文件:395.92 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

DOUBLE-CONVERSION ONLINE UPS

文件:607.39 Kbytes Page:11 Pages

ENERCON

Safe-IT Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Antibacterial Cable (M/3xM), MFi Certified, White, 4 ft. (1.2 m)

文件:161.54 Kbytes Page:3 Pages

TRIPPLITE

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

STMICROELECTRONICS

意法半导体

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Riedon

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

Smooth, high torque, roller ratchet handle

文件:254.3 Kbytes Page:3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Precision Wirewound Resistors

文件:318.25 Kbytes Page:2 Pages

Riedon

M101产品属性

  • 类型

    描述

  • 型号

    M101

  • 制造商

    TR FASTENINGS

  • 功能描述

    STUDDING S/S A2 M10X1M

  • 制造商

    TR FASTENINGS

  • 功能描述

    STUDDING, S/S, A2, M10X1M

  • 制造商

    TR FASTENINGS

  • 功能描述

    STUDDING, S/S, A2, M10X1M; Thread Size -

  • Metric

    M10; Fastener

  • Material

    Steel; Overall

  • Length

    1m;

  • SVHC

    No SVHC(19-Dec-2012); External

  • Length/Height

    1000mm;

  • Material

    Steel ;RoHS

  • Compliant

    Yes

更新时间:2025-8-8 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
SOP-8
100000
代理渠道/只做原装/可含税
ST/意法
23+
SOP-8P
7500
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
23+
SOP8
16900
正规渠道,只有原装!
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
3M
23+
原厂封装
299
只做原装只有原装现货实报
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
ST
2511
SOP8
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
RENESAS(瑞萨)/IDT
24+
SOP8208mil
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS(瑞萨电子)
22+
NA
500000
万三科技,秉承原装,购芯无忧
RENESAS(瑞萨)/IDT
2447
SOIC-8
315000
2000个/圆盘一级代理专营品牌!原装正品,优势现货,

M101数据表相关新闻