位置:首页 > IC中文资料第11030页 > M101
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea | STMICROELECTRONICS 意法半导体 | |||
Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea | STMICROELECTRONICS 意法半导体 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
High Performance Serial MRAM Memory Features Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31) Density • 4Mb, | RENESAS 瑞萨 | |||
VCSO BASED CLOCK JITTER ATTENUATOR 文件:360.12 Kbytes Page:8 Pages | ICST | |||
VCSO BASED CLOCK JITTER ATTENUATOR 文件:360.12 Kbytes Page:8 Pages | ICST | |||
VCSO BASED CLOCK JITTER ATTENUATOR 文件:360.12 Kbytes Page:8 Pages | ICST | |||
VCSO BASED CLOCK JITTER ATTENUATOR 文件:360.12 Kbytes Page:8 Pages | ICST | |||
VCSO BASED CLOCK JITTER ATTENUATOR 文件:360.12 Kbytes Page:8 Pages | ICST | |||
Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Cable (M/3xM), MFi Certified, Black, 6 ft. (1.8 m) 文件:176.7 Kbytes Page:3 Pages | TRIPPLITE | |||
包装:散装 描述:METRIC ROUND STANDOFFPLAIN ALUMI 五金件,紧固件,配件 板垫片,支座 | RAF RAF ELECTRONIC HARDWARE | |||
包装:散装 描述:METRIC ROUND STANDOFFBLACK ANODI 五金件,紧固件,配件 板垫片,支座 | RAF RAF ELECTRONIC HARDWARE | |||
10 (105/30) AWG Bare Copper 文件:395.79 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
10 (105/30) AWG Bare Copper 文件:395.69 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
10 (105/30) AWG Bare Copper 文件:395.79 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
10 (105/30) AWG Bare Copper 文件:395.86 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
10 (105/30) AWG Bare Copper 文件:395.75 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
10 (105/30) AWG Bare Copper 文件:395.62 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
10 (105/30) AWG Bare Copper 文件:395.91 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
10 (105/30) AWG Bare Copper 文件:395.92 Kbytes Page:4 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
DOUBLE-CONVERSION ONLINE UPS 文件:607.39 Kbytes Page:11 Pages | ENERCON | |||
Safe-IT Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Antibacterial Cable (M/3xM), MFi Certified, White, 4 ft. (1.2 m) 文件:161.54 Kbytes Page:3 Pages | TRIPPLITE | |||
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD | STMICROELECTRONICS 意法半导体 | |||
Precision Wirewound Resistors 100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t | Riedon | |||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | |||
Smooth, high torque, roller ratchet handle 文件:254.3 Kbytes Page:3 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
Precision Wirewound Resistors 文件:318.25 Kbytes Page:2 Pages | Riedon |
M101产品属性
- 类型
描述
- 型号
M101
- 制造商
TR FASTENINGS
- 功能描述
STUDDING S/S A2 M10X1M
- 制造商
TR FASTENINGS
- 功能描述
STUDDING, S/S, A2, M10X1M
- 制造商
TR FASTENINGS
- 功能描述
STUDDING, S/S, A2, M10X1M; Thread Size -
- Metric
M10; Fastener
- Material
Steel; Overall
- Length
1m;
- SVHC
No SVHC(19-Dec-2012); External
- Length/Height
1000mm;
- Material
Steel ;RoHS
- Compliant
Yes
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
23+ |
SOP-8P |
7500 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
23+ |
SOP8 |
16900 |
正规渠道,只有原装! |
|||
Renesas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
3M |
23+ |
原厂封装 |
299 |
只做原装只有原装现货实报 |
|||
Renesas |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ST |
2511 |
SOP8 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
RENESAS(瑞萨)/IDT |
24+ |
SOP8208mil |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
RENESAS(瑞萨)/IDT |
2447 |
SOIC-8 |
315000 |
2000个/圆盘一级代理专营品牌!原装正品,优势现货, |
M101规格书下载地址
M101参数引脚图相关
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- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- m1s
- m1105
- M1-0420
- M1-0412
- M1-0408
- M1040
- M10382
- M10372
- M1034
- M1033
- M1-0310
- M1026
- M1025
- M1-0220
- M1-0218
- M1-0212
- M1-0208
- M1-0204
- M1020
- M-1018
- M1014A
- M1014
- M1012SCA129
- M10-12RK
- M10110SCA129
- M10-10RX
- M10-10RK
- M1010B
- M10107LW SL199
- M10105KW SL199
- M10100HCZ10
- M10100800
- M10100600
- M1010-01I156.2500
- M1010-01I155.5200
- M1010-01-156.2500
- M1010-01-155.5200
- M1010-01
- M10-1.5X25MMCAP 18-8SS
- M101 STST-ZC1-
- M101 STA2-SF-
- M-101
- M100X250MMN70
- M100X20MMN70
- M100V-020.0M
- M100V-019.2M
- M100V-012.8M
- M100V-010.0M
- M100UFG
- M100-TAP-33-4-20MA-115V-60HZ
- M100SG
- M-100S
- M100-RT/76A/98
- M100-RT/76A/115
- M100-RT/35/76B/115
- M100-RT/35/76A/115
- M-100R
- M100PK
- M100MPK
- M100M-E3/54
- M100M
- M100LVEP111FATWG
- M100K
- M100J
- M100G
- M100FG
- M100FFX
- M100FF5
- M100FF3
- M100EVO
- M100D
- M100B
- M100A
- M1008
- M1-0012
- M10010
- M1-0008
- M10007
- M1000
M101数据表相关新闻
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2019-8-28
DdatasheetPDF页码索引
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