型号 功能描述 生产厂家 企业 LOGO 操作
M101

速度传感器

ETC

知名厂家

M101

CATV/MATV/Satellite Splitter (Indoor)

ETC

知名厂家

Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors

DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea

STMICROELECTRONICS

意法半导体

Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors

DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea

STMICROELECTRONICS

意法半导体

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESAS

瑞萨

1000V DC Midget (10x38mm) Photovoltaic Fuses

FEATURES/BENEFITS: • Low fault current interrupting capability • Durable construction for enhanced system longevity • Temperature cycle withstand capability • Guaranteed operation at temperature extremes • Industry’s first UL Listed Solution • Globally accepted

MERSEN

美尔森

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

RENESAS

瑞萨

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

VCSO BASED CLOCK JITTER ATTENUATOR

文件:360.12 Kbytes Page:8 Pages

ICST

Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Cable (M/3xM), MFi Certified, Black, 6 ft. (1.8 m)

文件:176.7 Kbytes Page:3 Pages

TRIPPLITE

包装:散装 描述:METRIC ROUND STANDOFFPLAIN ALUMI 五金件,紧固件,配件 板垫片,支座

RAF

包装:散装 描述:METRIC ROUND STANDOFFBLACK ANODI 五金件,紧固件,配件 板垫片,支座

RAF

10 (105/30) AWG Bare Copper

文件:395.79 Kbytes Page:4 Pages

ALPHAWIRE

10 (105/30) AWG Bare Copper

文件:395.69 Kbytes Page:4 Pages

ALPHAWIRE

10 (105/30) AWG Bare Copper

文件:395.79 Kbytes Page:4 Pages

ALPHAWIRE

10 (105/30) AWG Bare Copper

文件:395.86 Kbytes Page:4 Pages

ALPHAWIRE

10 (105/30) AWG Bare Copper

文件:395.75 Kbytes Page:4 Pages

ALPHAWIRE

10 (105/30) AWG Bare Copper

文件:395.62 Kbytes Page:4 Pages

ALPHAWIRE

10 (105/30) AWG Bare Copper

文件:395.91 Kbytes Page:4 Pages

ALPHAWIRE

10 (105/30) AWG Bare Copper

文件:395.92 Kbytes Page:4 Pages

ALPHAWIRE

DOUBLE-CONVERSION ONLINE UPS

文件:607.39 Kbytes Page:11 Pages

ENERCON

Safe-IT Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Antibacterial Cable (M/3xM), MFi Certified, White, 4 ft. (1.2 m)

文件:161.54 Kbytes Page:3 Pages

TRIPPLITE

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

STMICROELECTRONICS

意法半导体

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Riedon

Precision Wirewound Resistors

文件:318.25 Kbytes Page:2 Pages

Riedon

Smooth, high torque, roller ratchet handle

文件:254.3 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

M101产品属性

  • 类型

    描述

  • 型号

    M101

  • 制造商

    TR FASTENINGS

  • 功能描述

    STUDDING S/S A2 M10X1M

  • 制造商

    TR FASTENINGS

  • 功能描述

    STUDDING, S/S, A2, M10X1M

  • 制造商

    TR FASTENINGS

  • 功能描述

    STUDDING, S/S, A2, M10X1M; Thread Size -

  • Metric

    M10; Fastener

  • Material

    Steel; Overall

  • Length

    1m;

  • SVHC

    No SVHC(19-Dec-2012); External

  • Length/Height

    1000mm;

  • Material

    Steel ;RoHS

  • Compliant

    Yes

更新时间:2025-12-25 17:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
SOP8
5000
一级代理 原装正品假一罚十价格优势长期供货
原厂原装
21+
原装封装
1098
WESTCODE
23+
模块
800
全新原装正品,量大可订货!可开17%增值票!价格优势!
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
NEW
原厂封装
9896
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
25+
500
公司现货库存
WESTCODE
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
N/A
22+
N/A
12245
现货,原厂原装假一罚十!
ST
22+
SOP-8
5000
只做原装鄙视假货15118075546
ST/意法
2450+
SOP8
6540
只做原装正品假一赔十为客户做到零风险!!

M101数据表相关新闻