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型号	功能描述	生产厂家企业	LOGO
M101	速度传感器	Dynalco	Dynalco
M101	CATV/MATV/Satellite Splitter (Indoor)	YINWEI	YINWEI
M1014	Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M1014A	Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M10162040054X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040054X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040054X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040054X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040054X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040054X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040054X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040054X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M10162040108X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M1018589	1000V DC Midget (10x38mm) Photovoltaic Fuses FEATURES/BENEFITS: • Low fault current interrupting capability • Durable construction for enhanced system longevity • Temperature cycle withstand capability • Guaranteed operation at temperature extremes • Industry’s first UL Listed Solution • Globally accepted	MERSEN 美尔森	MERSEN
M1010-01	VCSO BASED CLOCK JITTER ATTENUATOR 文件：360.12 Kbytes Page：8 Pages	ICST	ICST
M1010-01	VCSO BASED CLOCK JITTER ATTENUATOR	RENESAS 瑞萨	RENESAS
M1010-01-155.5200	VCSO BASED CLOCK JITTER ATTENUATOR 文件：360.12 Kbytes Page：8 Pages	ICST	ICST
M1010-01-156.2500	VCSO BASED CLOCK JITTER ATTENUATOR 文件：360.12 Kbytes Page：8 Pages	ICST	ICST
M1010-01I155.5200	VCSO BASED CLOCK JITTER ATTENUATOR 文件：360.12 Kbytes Page：8 Pages	ICST	ICST
M1010-01I156.2500	VCSO BASED CLOCK JITTER ATTENUATOR 文件：360.12 Kbytes Page：8 Pages	ICST	ICST
M101-006-LMC-BK	Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Cable (M/3xM), MFi Certified, Black, 6 ft. (1.8 m) 文件：176.7 Kbytes Page：3 Pages	TRIPPLITE	TRIPPLITE
M1010-2545-AL	包装：散装描述：METRIC ROUND STANDOFFPLAIN ALUMI 五金件，紧固件，配件板垫片，支座	RAF	RAF
M1010-2545-AL-24	包装：散装描述：METRIC ROUND STANDOFFBLACK ANODI 五金件，紧固件，配件板垫片，支座	RAF	RAF
M10104KW	10 (105/30) AWG Bare Copper 文件：395.79 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M10104LW	10 (105/30) AWG Bare Copper 文件：395.69 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M10104RW	10 (105/30) AWG Bare Copper 文件：395.79 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M10105KW	10 (105/30) AWG Bare Copper 文件：395.86 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M10105LW	10 (105/30) AWG Bare Copper 文件：395.75 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M10105RW	10 (105/30) AWG Bare Copper 文件：395.62 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M10107KW	10 (105/30) AWG Bare Copper 文件：395.91 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M10107LW	10 (105/30) AWG Bare Copper 文件：395.92 Kbytes Page：4 Pages	ALPHAWIRE	ALPHAWIRE
M1012	DOUBLE-CONVERSION ONLINE UPS 文件：607.39 Kbytes Page：11 Pages	ENERCON	ENERCON
M101AB-004-LMCW	Safe-IT Universal USB-A to Lightning, USB Micro-B and USB-C Sync/Charge Antibacterial Cable (M/3xM), MFi Certified, White, 4 ft. (1.2 m) 文件：161.54 Kbytes Page：3 Pages	TRIPPLITE	TRIPPLITE
HER101	HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V) Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS	MOSPEC 统懋	MOSPEC
TIP101	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc	MOTOROLA 摩托罗拉	MOTOROLA
UPG101P	WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the	NEC 瑞萨	NEC
LM101A	Operational Amplifiers 文件：509.25 Kbytes Page：17 Pages	NSC 国半	NSC
LM101AH	Operational Amplifiers 文件：509.25 Kbytes Page：17 Pages	NSC 国半	NSC

M101产品属性

类型
描述
主体形状：
Cylindrical; Threaded Barrel
产品类别：
Speed Sensors

M101供应商更多...

更新时间：2026-7-22 22:26:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	M1010NC400	WESTCODE	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
深圳市科恒伟业电子有限公司	M1011A	ST/意法	2450+	SOP8	6540	只做原装正品假一赔十为客户做到零风险!!	询价
洪芯国际半导体（深圳）有限公司	M101AC	ST	26+	DFN33	86720	全新原装正品价格最实惠承诺假一赔百	询价
深圳市英卓尔科技有限公司	M101C	ST	20+	SOP8	2960	诚信交易大量库存现货	询价
讯运(深圳/上海)电子有限公司	M10162040054X0IWAR	RENESAS(瑞萨)/IDT	25+	DFN-8(5x6)	499	全新原装	询价
深圳市昌和盛利电子有限公司	M101C	ST	26+	原厂封装	9896	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市澳亿芯电子科技有限公司	M101AI	ST	25+	SOP8	17500	普通	询价
深圳市力拓辉电子有限公司	M101AI	ST	22+	SOP-8	5000	只做原装鄙视假货15118075546	询价
深圳市卓越微芯电子有限公司	M101A	ST	25+	SOP	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华斯顿科技有限公司	M10120-11-155.5200	IDT	25+23+	SMD	29780	绝对原装正品全新进口深圳现货	询价

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M101规格书下载地址

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M101数据表相关新闻

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找IC，尽在114IC

M101产品属性

M101供应商更多...

M101芯片相关品牌

M101规格书下载地址

M101参数引脚图相关

M101数据表相关新闻

M0914LC250只有原装，只做原装

M12L16161A-7T 原装现货

LZC8620-BIN1

LZC8650

M12S16161AY1LG 进口原装，主营军工级IC

M12L128168A-6T原装进口房间现货价格优势

DdatasheetPDF页码索引