TOPLED RG

Features ● color of package: white ● for use as optical indicator ● for backlighting, optical coupling into light pipes and lenses ● suitable for all SMT assembly and soldering methods ● available taped on reel (12 mm tape) ● load dump resistant acc. to DIN 40839

TOPLED RG

Features ● color of package: white ● for use as optical indicator ● for backlighting, optical coupling into light pipes and lenses ● suitable for all SMT assembly and soldering methods ● available taped on reel (12 mm tape) ● load dump resistant acc. to DIN 40839

TOPLED RG

Features ● color of package: white ● for use as optical indicator ● for backlighting, optical coupling into light pipes and lenses ● suitable for all SMT assembly and soldering methods ● available taped on reel (12 mm tape) ● load dump resistant acc. to DIN 40839

TOPLED RG

Features ● color of package: white ● for use as optical indicator ● for backlighting, optical coupling into light pipes and lenses ● suitable for all SMT assembly and soldering methods ● available taped on reel (12 mm tape) ● load dump resistant acc. to DIN 40839

TOPLED RG

Features ● color of package: white ● for use as optical indicator ● for backlighting, optical coupling into light pipes and lenses ● suitable for all SMT assembly and soldering methods ● available taped on reel (12 mm tape) ● load dump resistant acc. to DIN 40839

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th