丝印代码：LVC126A；SN74LVC126A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Operates from 1.65V to 3.6V • Specified from –40°C to +125°C • Inputs accept voltages up to 5.5V • Maximum tpd of 4.7ns at 3.3V • Typical VOLP (output ground bounce), 2V at VCC = 3.3V, TA = 25°C • Latch-u

丝印代码：LVC126A；SN74LVC126A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Operates from 1.65V to 3.6V • Specified from –40°C to +125°C • Inputs accept voltages up to 5.5V • Maximum tpd of 4.7ns at 3.3V • Typical VOLP (output ground bounce), 2V at VCC = 3.3V, TA = 25°C • Latch-u

丝印代码：LVC126A；SN74LVC126A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Operates from 1.65V to 3.6V • Specified from –40°C to +125°C • Inputs accept voltages up to 5.5V • Maximum tpd of 4.7ns at 3.3V • Typical VOLP (output ground bounce), 2V at VCC = 3.3V, TA = 25°C • Latch-u

丝印代码：LVC126A；SN74LVC126A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Operates from 1.65V to 3.6V • Specified from –40°C to +125°C • Inputs accept voltages up to 5.5V • Maximum tpd of 4.7ns at 3.3V • Typical VOLP (output ground bounce), 2V at VCC = 3.3V, TA = 25°C • Latch-u

丝印代码：LVC126A；SN74LVC126A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Operates from 1.65V to 3.6V • Specified from –40°C to +125°C • Inputs accept voltages up to 5.5V • Maximum tpd of 4.7ns at 3.3V • Typical VOLP (output ground bounce), 2V at VCC = 3.3V, TA = 25°C • Latch-u

丝印代码：LVC126A；SN74LVC126A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Operates from 1.65V to 3.6V • Specified from –40°C to +125°C • Inputs accept voltages up to 5.5V • Maximum tpd of 4.7ns at 3.3V • Typical VOLP (output ground bounce), 2V at VCC = 3.3V, TA = 25°C • Latch-u

QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

文件：361.82 Kbytes Page：14 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

文件：45.28 Kbytes Page：2 Pages