Triple 1.8V to 6V High-Side MOSFET Drivers

文件：231.89 Kbytes Page：8 Pages

High Speed Single/Dual N-Channel MOSFET Drivers

文件：247.61 Kbytes Page：20 Pages

Triple 1.8V to 6V High-Side MOSFET Drivers

文件：214.5 Kbytes Page：8 Pages

三通道、1.8V 至 6V 高压侧 MOSFET 驱动器

Triple 1.8V to 6V High-Side MOSFET Drivers

文件：214.5 Kbytes Page：8 Pages

Triple 1.8V to 6V High-Side MOSFET Drivers

文件：231.89 Kbytes Page：8 Pages

Triple 1.8V to 6V High-Side MOSFET Drivers

文件：231.89 Kbytes Page：8 Pages

Triple 1.8V to 6V High-Side MOSFET Drivers

文件：231.89 Kbytes Page：8 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HIGH-SIDE 8SOIC 集成电路（IC） 栅极驱动器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR HIGH-SIDE 8SOIC 集成电路（IC） 栅极驱动器

DOLBY B TYPE NOISE REDUCTION SYSTEM

Description CXA1100, CXA1101, CXA1102 and CXA1163 are ICs including two separate Dolby B type noise reduction processors. Seven devices with four Dolby levels and two types of package are provided for various applications. These devices feature very few external components, which is achieved by

High Output, Short Arc Xenon Flashlamp with Internal Reflector

Description The FX-1160 Reflector Lamp has greater than 40 more usable light intensity than our standard FX-1150 and is completely interchangeable. PerkinElmer customers have the option of either taking advantage of the greatly increased light output or they can operate the FX-1160 at a reduced i

40-Bit Anode Driver

GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is fabricated by CMOS and the output driver requiring a high withstand voltage is fabri

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DESCRIPTION The SC1162/3 combines a synchronous voltage mode controller with a low-dropout linear regulator providing most of the circuitry necessary to implement two DC/DC converters for powering advanced microprocessors such as Pentium® II. FEATURES • Synchronous design, enables no he

GaAlAs Infrared Emitting Diodes

DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.