位置：首页 > IC中文资料 > LSG65R650HT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages,hardswitchingPWMstagesandresonants | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSCEPowerTransistor Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
650VCoolMOS??CEPowerTransistor 文件：1.16448 Mbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.34622 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
2021+ |
LGA-12(2x2) |
499 |
||||
ST |
24+ |
VFLGA-12221 |
200000 |
原装进口正口,支持样品 |
|||
ST |
25+ |
VFLGA-12221 |
16900 |
原装，请咨询 |
|||
ST/意法 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
24+ |
SMD |
17900 |
加速计 |
|||
ST/意法半导体 |
21+ |
LGA-12 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
24+ |
LGA-12 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
N/A |
2023+ |
SOP8 |
50000 |
全新原装现货 |
|||
ST意法 |
20+ |
LGA12 |
17000 |
加速度计,只做全新原装 |
LSG65R650HT芯片相关品牌
LSG65R650HT规格书下载地址
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DdatasheetPDF页码索引
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