高压超结VDMOS

650V 0.28Ω N-channel MOSFET

 Description MME65R280Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to

650V 0.28Ω N-channel MOSFET

 Description MME65R280Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

650V 0.28ohm N-channel MOSFET

文件：2.88615 Mbytes Page：10 Pages

650V 0.28ohm N-channel MOSFET

文件：1.32377 Mbytes Page：10 Pages