250 Watts

SPECIAL FEATURES  Medical and ITE safeties  Active power factor correction  3” x 5” footprint  Less than 1U high  EN61000-3-2 compliant  Remote sense  Power fail  Adjustable main output  Built-in Class B EMI filter  Overvoltage protection  Overload protection  Thermal overl

125—250 Watt Medical AC-DC Power Supplies

The LPS200-M series of open-frame AC-DC power supplies comprises four single output models, offering voltages of 5 V, 12 V, 15 V, 24 V or 48 V, plus an isolated 12 V fan output. All four models feature ITE and medical safety approvals and accept a universal input of 90—264 Vac or 120—300 Vdc. Compre ·Medical and ITE safeties\n·Active power factor correction\n·3 x 5 x 1U form factor\n·Isolated 12 V Fan output\n·Overload protection\n·Built-in Class B EMI filter\n·Remote sense\n·EN61000-3-2 compliant\n·Adjustable main output\n·Power fail \n·Thermal overload protection\n·Overvoltage protection;

包装：散装 描述：AC/DC CONVERTER 12V 125W 电源 - 外部/内部（板外） AC DC 转换器

Total Power: 125 - 250 Watts

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Medical and ITE safeties

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Medical and ITE safeties

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Medical and ITE safeties

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250 Watts Medical and ITE safeties

文件：517.57 Kbytes Page：3 Pages

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.