2 W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 3000 mm Schottky barrier gate. The recessed “mushroom” gate structure minim

2W Power PHEMT

DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minim

2 W POWER PHEMT

PACKAGED 2W POWER PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

PACKAGED 2W POWER PHEMT

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

PC oscilloscopes and MSOs

Introduction The PicoScope 3000 Series PC oscilloscopes are small, light and portable, while offering the high-performance specifications required by engineers in the lab or on the move. These oscilloscopes offer 2 or 4 analog channels, plus an additional 16 digital channels on the mixed-signal

100 × .100 Latch/Ejector, Straight and Right Angle

• Military (with 3M’s 3518 & N3518 polarizing key) and centerbump polarization • Optional ejector latches • Mounting holes for securing header to board • Optional polarizing posts available • High temperature insulator option suitable for “no lead” soldering operations • High temperature op

Dual-Core Intel Xeon Processor

文件：2.41404 Mbytes Page：102 Pages

3M??Pak 100 4-Wall Header

文件：682.27 Kbytes Page：5 Pages

Scope Connect Software

文件：520.33 Kbytes Page：6 Pages