丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

丝印代码：LP2998MA；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

LP2998 DDR-I and DDR-II Termination Regulator

文件：1.17987 Mbytes Page：26 Pages

ECP5 Versa Development Board User Guide

Features • Half-length PCI Express form-factor —Allows demonstration of PCI Express x1 interconnection • Electrical testing of one full-duplex SERDES channel via SMA connections • USB-B connection for UART and device programming • Two RJ45 interfaces to 10/100/1000 Ethernet to RGMII • On-bo

DDR Termination Regulator

文件：2.56125 Mbytes Page：33 Pages

LP2998 DDR-I and DDR-II Termination Regulator

文件：1.17987 Mbytes Page：26 Pages

DDR Termination Regulator

文件：2.56125 Mbytes Page：33 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC REG CONV DDR 1OUT 8SOIC 集成电路（IC） 特殊用途稳压器

LP2998 DDR-I and DDR-II Termination Regulator

文件：1.17987 Mbytes Page：26 Pages

DDR Termination Regulator

文件：2.56125 Mbytes Page：33 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG CONV DDR 1OUT 8SOIC 集成电路（IC） 特殊用途稳压器

DDR-II and DDR-I Termination Regulator

文件：338.72 Kbytes Page：18 Pages

DUAL FULL-BRIDGE MOTOR DRIVER

DUAL FULL-BRIDGE MOTOR DRIVER As an interface between low-level logic and solenoids, dc (brush) motors, or stepper motors, the UDN2998W dual full-bridge driver will operate inductive loads up to 50 V with continuous output currents of up to 2 A per bridge or peak (start-up) currents to 3 A. T

DUAL FULL-BRIDGE MOTOR DRIVER

DUAL FULL-BRIDGE MOTOR DRIVER As an interface between low-level logic and solenoids, dc (brush) motors, or stepper motors, the UDN2998W dual full-bridge driver will operate inductive loads up to 50 V with continuous output currents of up to 2 A per bridge or peak (start-up) currents to 3 A. T

DUAL FULL-BRIDGE MOTOR DRIVER

DUAL FULL-BRIDGE MOTOR DRIVER As an interface between low-level logic and solenoids, dc (brush) motors, or stepper motors, the UDN2998W dual full-bridge driver will operate inductive loads up to 50 V with continuous output currents of up to 2 A per bridge or peak (start-up) currents to 3 A. T

2.7-2.9GHz 20W Packaged GaAs Power FETs

文件：70.31 Kbytes Page：2 Pages