位置：首页 > IC中文资料第1046页 > LP2998
LP2998价格
参考价格：￥69.4575
型号：LP2998EVAL 品牌：TEXAS 备注：这里有LP2998多少钱，2026年最近7天走势，今日出价，今日竞价，LP2998批发/采购报价，LP2998行情走势销售排行榜，LP2998报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LP2998 | LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 |   | |
LP2998 | DDR-II and DDR-I Termination Regulator | RENESAS 瑞萨 | | |
LP2998 | 具有关断引脚的 1.5A DDR 终端稳压器 | TI 德州仪器 | | |
LP2998 | DDR-II and DDR-I Termination Regulator 文件：338.72 Kbytes Page：18 Pages | Intersil | | |
LP2998 | LP2998 DDR-I and DDR-II Termination Regulator 文件：1.17987 Mbytes Page：26 Pages | TI 德州仪器 | | |
LP2998 | DDR Termination Regulator 文件：2.56125 Mbytes Page：33 Pages | TI 德州仪器 | | |
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
ECP5 Versa Development Board User Guide Features • Half-length PCI Express form-factor —Allows demonstration of PCI Express x1 interconnection • Electrical testing of one full-duplex SERDES channel via SMA connections • USB-B connection for UART and device programming • Two RJ45 interfaces to 10/100/1000 Ethernet to RGMII • On-bo | Lattice 莱迪思 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998/LP2998-Q1 DDR Termination Regulator 1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo | TI 德州仪器 | | ||
LP2998 DDR-I and DDR-II Termination Regulator 文件：1.17987 Mbytes Page：26 Pages | TI 德州仪器 | | ||
DDR Termination Regulator 文件：2.56125 Mbytes Page：33 Pages | TI 德州仪器 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG CONV DDR 1OUT 8SOIC 集成电路（IC） 特殊用途稳压器 | TI 德州仪器 | | ||
LP2998 DDR-I and DDR-II Termination Regulator 文件：1.17987 Mbytes Page：26 Pages | TI 德州仪器 | | ||
DDR Termination Regulator 文件：2.56125 Mbytes Page：33 Pages | TI 德州仪器 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC REG CONV DDR 1OUT 8SOIC 集成电路（IC） 特殊用途稳压器 | TI 德州仪器 | | ||
LP2998 DDR-I and DDR-II Termination Regulator 文件：1.17987 Mbytes Page：26 Pages | TI 德州仪器 | | ||
DDR Termination Regulator 文件：2.56125 Mbytes Page：33 Pages | TI 德州仪器 | | ||
LP2998 DDR-I and DDR-II Termination Regulator 文件：1.17987 Mbytes Page：26 Pages | TI 德州仪器 | | ||
DDR Termination Regulator 文件：2.56125 Mbytes Page：33 Pages | TI 德州仪器 | | ||
LP2998 DDR-I and DDR-II Termination Regulator 文件：1.17987 Mbytes Page：26 Pages | TI 德州仪器 | | ||
DDR Termination Regulator 文件：2.56125 Mbytes Page：33 Pages | TI 德州仪器 | | ||
LP2998 DDR-I and DDR-II Termination Regulator 文件：1.17987 Mbytes Page：26 Pages | TI 德州仪器 | | ||
DDR Termination Regulator 文件：2.56125 Mbytes Page：33 Pages | TI 德州仪器 | |
LP2998产品属性
- 类型
描述
- 型号
LP2998
- 功能描述
电源管理IC开发工具 LP2998 EVAL BOARD
- RoHS
否
- 制造商
Maxim Integrated
- 产品
Evaluation Kits
- 类型
Battery Management
- 工具用于评估
MAX17710GB
- 输出电压
1.8 V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
2511 |
4945 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
||||
TI(德州仪器) |
25+ |
N/A |
6000 |
原装，请咨询 |
|||
NS/国半 |
24+ |
SOP-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
HARRIS/哈里斯 |
23+ |
QFN |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TI |
23+ |
N/A |
8000 |
只做原装现货 |
|||
NS/国半 |
23+ |
SOP-8 |
32732 |
原装正品代理渠道价格优势 |
|||
TI/德州仪器 |
2447 |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NS |
23+ |
SOP-8 |
4500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
NS |
13+ |
NS |
8816 |
只做原厂原装,认准宝芯创配单专家 |
|||
TI(德州仪器) |
26+ |
N/A |
360000 |
只有原装 可配单 |
LP2998规格书下载地址
LP2998参数引脚图相关
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- m1s
- m1105
- lw26
- lvds
- lt15
- ls244
- ls163
- ls138
- LP311M
- LP311JG
- LP311DR
- LP311D
- LP3110
- LP311
- LP3102
- LP3101A
- LP3100
- LP30-85
- LP308
- LP307
- LP306
- LP305
- LP304
- LP303
- LP302
- LP301
- LP3000
- LP300
- LP2S2WHTRED-N
- LP2S2WHTBLU-N
- LP2S-26S-809-Z
- LP2S-26S-559-Z
- LP2S-26S-509-Z
- LP2S-26S-229-Z
- LP2S-26S-209-Z
- LP2S1WHTBLU-N
- LP2S1BLKN-N
- LP2S-16S-229-Z
- LP2S-16S-209-Z
- LP2998QMRE/NOPB
- LP2998QMR/NOPB
- LP2998MRX/NOPB
- LP2998MRE/NOPB
- LP2998MR/NOPB
- LP2998MAX/NOPB
- LP2998MAE/NOPB
- LP2998MA/NOPB
- LP2998EVAL
- LP2997MX/NOPB
- LP2997MRX/NOPB
- LP2997MR/NOPB
- LP2997MR
- LP2997M/NOPB
- LP2997M
- LP2997
- LP2996MX/NOPB
- LP2996MRX/NOPB
- LP2996MREVAL
- LP2996MR@NOPB
- LP2996MR/NOPB
- LP2996MR
- LP2996M/NOPB
- LP2996M
- LP2996LQEVAL
- LP2996LQ/NOPB
- LP2996AMRX/NOPB
- LP2996AMR/NOPB
- LP2996A
- LP2996
- LP2995MX/NOPB
- LP2995MRX/NOPB
- LP2995MR/NOPB
- LP2995MR
- LP2995M
- LP2995
- LP2994M
- LP2994
- LP2992
- LP2989
- LP2988
- LP2987
- LP2986
- LP2985A
- LP2985
- LP2983
- LP2982
- LP2981A
- LP2981
LP2998数据表相关新闻
LP2996AMR坚持十多年只为原装
LP2996AMR坚持十多年只为原装
2024-7-1LP2997MX/ NOPB
LP2997MX/ NOPB
2023-12-4LP2998MRX/NOPB
www.hfxcom.com
2021-12-20LP2998MRX/NOPB
VQFN-48 专业电源管理 (PMIC) , 0 V to 57 V 专业电源管理 (PMIC) , ACT88325 专业电源管理 (PMIC) , 1.7 V to 3.3 V, 1.7 V to 3.9 V, 0.9 V to 3.3 V 专业电源管理 (PMIC) , QFN-56 + 105 C 专业电源管理 (PMIC) , - 55 C 专业电源管理 (PMIC)
2020-8-20LP2998MR/NOPB公司原装现货
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2020-1-13LP2994-DDR终端稳压器
一般说明 LP2985 - XX是150毫安，固定输出电压稳压器设计在电池供电，提供非常低的压差，低噪音，并便携式应用。输出电压预设为1.8，2.8，3.0，3.3，3.6，或5.0 V。LP2985 - XX实现设计与优化的PNP过程中，无与伦比的性能在所有规格的关键如电池供电的低电源电流，低压差设计电压，功耗低，体积小，动态响应快线路和负载，高精度输出等，该稳压器由一个内部参考电压，误差放大器，电流驱动器限制器和热关断机制。LP2985 - XX是安置在一个5引脚SOT23 - 5封装。 特点 •非常低的消费电流：85 m
2013-1-19
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
