LN175价格
参考价格:¥341.5810
型号:LN175F100 品牌:Ohmite 备注:这里有LN175多少钱,2026年最近7天走势,今日出价,今日竞价,LN175批发/采购报价,LN175行情走势销售排行榜,LN175报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LN175 | GaAlAs Infrared Light Emitting Diode GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good radiant power output linearity with respect to input current ● Wide di | PANASONIC 松下 | ||
LN175 | 封装/外壳:径向 包装:散装 描述:EMITTER IR 900NM 100MA RADIAL 光电器件 LED 发射器 - 红外,紫外,可见光 | PANASONIC 松下 | ||
铝壳/瓷管电阻 | OHMITE | |||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state | MOTOROLA 摩托罗拉 | |||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state | MOTOROLA 摩托罗拉 | |||
N-CHANNEL BROADBAND RF POWER FETs Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance | MOTOROLA 摩托罗拉 | |||
Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea | NTE | |||
L-Band PA DRIVER AMPLIFIER DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: | NEC 瑞萨 |
LN175产品属性
- 类型
描述
- 阻值:
5Ω
- 精度:
±1%
- 功率:
175W
- 温度系数:
±400ppm/℃
LN175规格书下载地址
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