丝印代码：LMX2572LP；LMX2572LP 2-GHz Low Power Wideband RF Synthesizer With FSK Modulation

1 Features 1• Output Frequency: 12.5 MHz to 2 GHz • Low Power Consumption: 70 mA at 3.3-V Supply • –124-dBc/Hz Phase Noise at 100-kHz Offset With 800-MHz Carrier • PLL Figure of Merit: –232 dBc/Hz • PLL Normalized 1/f Noise: –123.5 dBc/Hz • 32-Bit Fractional-N Divider • Remove Integer Boun

丝印代码：LMX2572LP；2-GHz Low Power Wideband RF Synthesizer With FSK Modulation

文件：1.69702 Mbytes Page：82 Pages

封装/外壳：40-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FREQUENCY SYNTH 40VQFN 集成电路（IC） 时钟发生器，PLL，频率合成器

丝印代码：LMX2572LP；LMX2572LP 2-GHz Low Power Wideband RF Synthesizer With FSK Modulation

1 Features 1• Output Frequency: 12.5 MHz to 2 GHz • Low Power Consumption: 70 mA at 3.3-V Supply • –124-dBc/Hz Phase Noise at 100-kHz Offset With 800-MHz Carrier • PLL Figure of Merit: –232 dBc/Hz • PLL Normalized 1/f Noise: –123.5 dBc/Hz • 32-Bit Fractional-N Divider • Remove Integer Boun

丝印代码：LMX2572LP；LMX2572LP 2-GHz Low Power Wideband RF Synthesizer With FSK Modulation

1 Features 1• Output Frequency: 12.5 MHz to 2 GHz • Low Power Consumption: 70 mA at 3.3-V Supply • –124-dBc/Hz Phase Noise at 100-kHz Offset With 800-MHz Carrier • PLL Figure of Merit: –232 dBc/Hz • PLL Normalized 1/f Noise: –123.5 dBc/Hz • 32-Bit Fractional-N Divider • Remove Integer Boun

丝印代码：LMX2572LP；LMX2572LP 2-GHz Low Power Wideband RF Synthesizer With FSK Modulation

1 Features 1• Output Frequency: 12.5 MHz to 2 GHz • Low Power Consumption: 70 mA at 3.3-V Supply • –124-dBc/Hz Phase Noise at 100-kHz Offset With 800-MHz Carrier • PLL Figure of Merit: –232 dBc/Hz • PLL Normalized 1/f Noise: –123.5 dBc/Hz • 32-Bit Fractional-N Divider • Remove Integer Boun

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

Silicon NPN Transistor High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Current Capacity Applications: • Relay Drivers • High Speed Inverters • Converters

150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

文件：273.85 Kbytes Page：12 Pages

Negative Output Flyback Pulse Width Modulator

文件：129.22 Kbytes Page：5 Pages