N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 54mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N 沟道，PowerTrench® MOSFET，150V，29A，54mΩ

N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. • RDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A\n•Qg(tot) = 26nC (Typ.), VGS = 10V\n•低密勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）;

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

Silicon NPN Transistor High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Current Capacity Applications: • Relay Drivers • High Speed Inverters • Converters

150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

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Negative Output Flyback Pulse Width Modulator

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