N 沟道，UltraFET® Trench MOSFET，150V，4.9A，47mΩ

UltraFET®器件结合了各种特性，可在功率转换应用中提供基准效率。 由于针对 Rds(on)、低 ESR、低总电荷和米勒栅极电荷进行了优化，这些器件是高频 DC-DC 转换器的理想选择。 •RDS(ON) = 0.040 Ω（典型值），V = 10 V\n•Qg(tot) = 29nC（典型值），VGS = 10V\n•低 QRR体二极管\n•已将高频情况下的效率最大化\n•UIS 额定值;

150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

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N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

Silicon NPN Transistor High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Current Capacity Applications: • Relay Drivers • High Speed Inverters • Converters

Negative Output Flyback Pulse Width Modulator

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