LMV55x 3-MHz, Micropower RRO Amplifiers

1 Features 1• Specified 3-V and 5-V Performance • High Unity Gain Bandwidth 3 MHz • Supply Current (Per Amplifier) 37 μA • CMRR 93 dB • PSRR 90 dB • Slew Rate 1 V/μs • Output Swing With 100-kΩ Load 70 mV From Rail • Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ • Temperature Range:

Quad, 5-V, 3-MHz, low quiescent current (37-μA) operational amplifier

LMV55x 是采用 TI 先进的 VIP50 工艺的高性能、低功耗运算放大器。这些器件具有 3MHz 带宽，并且电流消耗仅为 37µA（每个放大器），其带宽功率比是同类运算放大器中较为出色的。这些超低功耗放大器具有单位增益稳定性，可为需要宽带宽的超低功耗 应用 提供出色的解决方案。\n\nLMV55x 具有一个轨至轨输出级和一个低至低于接地值的扩展输入共模范围。\n\nLMV55x 的工作电源电压范围为 2.7V 至 5.5V。这些放大器可在宽温度范围（−40°C 至 125°C）内工作，是汽车 应用、传感器 应用 以及便携式仪表 应用的理想选择。LMV551 采用超小型 5 引脚 SC70 • 在 3V 和 5V 电压下具有额定性能 \n• 高单位增益带宽：3MHz\n• 电源电流（每个放大器）：37µA\n• CMRR 93 dB\n• PSRR 90 dB\n• 转换速率为 1V/µs\n• 100kΩ 负载下以电源轨为基准的输出摆幅为 70mV\n• 总谐波失真：1kHz、2kΩ 时为 0.003%\n• 温度范围：−40°C 至 125°C;

3 MHz, Micropower RRO Amplifiers

文件：936.41 Kbytes Page：14 Pages

丝印代码：LMV554MT；LMV55x 3-MHz, Micropower RRO Amplifiers

1 Features 1• Specified 3-V and 5-V Performance • High Unity Gain Bandwidth 3 MHz • Supply Current (Per Amplifier) 37 μA • CMRR 93 dB • PSRR 90 dB • Slew Rate 1 V/μs • Output Swing With 100-kΩ Load 70 mV From Rail • Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ • Temperature Range:

丝印代码：LMV554MT；LMV55x 3-MHz, Micropower RRO Amplifiers

1 Features 1• Specified 3-V and 5-V Performance • High Unity Gain Bandwidth 3 MHz • Supply Current (Per Amplifier) 37 μA • CMRR 93 dB • PSRR 90 dB • Slew Rate 1 V/μs • Output Swing With 100-kΩ Load 70 mV From Rail • Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ • Temperature Range:

丝印代码：LMV554MT；LMV55x 3-MHz, Micropower RRO Amplifiers

1 Features 1• Specified 3-V and 5-V Performance • High Unity Gain Bandwidth 3 MHz • Supply Current (Per Amplifier) 37 μA • CMRR 93 dB • PSRR 90 dB • Slew Rate 1 V/μs • Output Swing With 100-kΩ Load 70 mV From Rail • Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ • Temperature Range:

丝印代码：LMV554MT；LMV55x 3-MHz, Micropower RRO Amplifiers

1 Features 1• Specified 3-V and 5-V Performance • High Unity Gain Bandwidth 3 MHz • Supply Current (Per Amplifier) 37 μA • CMRR 93 dB • PSRR 90 dB • Slew Rate 1 V/μs • Output Swing With 100-kΩ Load 70 mV From Rail • Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ • Temperature Range:

3 MHz, Micropower RRO Amplifiers

文件：936.41 Kbytes Page：14 Pages

LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

文件：1.15774 Mbytes Page：27 Pages

LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

文件：1.15774 Mbytes Page：27 Pages

3 MHz, Micropower RRO Amplifiers

文件：936.41 Kbytes Page：14 Pages

LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

文件：1.15774 Mbytes Page：27 Pages

LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

文件：1.15774 Mbytes Page：27 Pages

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)

NPN Silicon RF Transistor ● For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt