3 MHz, Micropower RRO Amplifiers

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丝印代码：LMV554MT；LMV55x 3-MHz, Micropower RRO Amplifiers

1 Features 1• Specified 3-V and 5-V Performance • High Unity Gain Bandwidth 3 MHz • Supply Current (Per Amplifier) 37 μA • CMRR 93 dB • PSRR 90 dB • Slew Rate 1 V/μs • Output Swing With 100-kΩ Load 70 mV From Rail • Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ • Temperature Range:

丝印代码：LMV554MT；LMV55x 3-MHz, Micropower RRO Amplifiers

1 Features 1• Specified 3-V and 5-V Performance • High Unity Gain Bandwidth 3 MHz • Supply Current (Per Amplifier) 37 μA • CMRR 93 dB • PSRR 90 dB • Slew Rate 1 V/μs • Output Swing With 100-kΩ Load 70 mV From Rail • Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ • Temperature Range:

LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

文件：1.15774 Mbytes Page：27 Pages

LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

文件：1.15774 Mbytes Page：27 Pages

NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)

NPN Silicon RF Transistor ● For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt