LMV551/LMV552/LMV554 3 MHz, Micropower RRO Amplifiers

文件：1.15774 Mbytes Page：27 Pages

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)

NPN Silicon RF Transistor ● For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt