Single-Channel, Quad-Band GSM Power Controller in micro SMD

文件：885.11 Kbytes Page：13 Pages

Single-Channel, Quad-Band GSM Power Controller in micro SMD

Single-Channel, Quad-Band GSM Power Controller in micro SMD

文件：885.11 Kbytes Page：13 Pages

包装：盒 描述：BOARD EVALUATION FOR LMV243 开发板，套件，编程器 射频评估和开发套件，开发板

Single-Channel, Quad-Band GSM Power Controller in micro SMD

文件：885.11 Kbytes Page：13 Pages

封装/外壳：8-TFBGA，DSBGA 包装：带 描述：IC RF PWR CNTRL QUAD 2GHZ 8DSBGA RF/IF，射频/中频和 RFID RF 功率控制器 IC

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —