LMH6619Q 130 MHz, 1.25 mA RRIO Operational Amplifier

1FEATURES 23• VS = 5V, RL = 1 kΩ, TA = 25°C and AV = +1, unless otherwise specified. • Operating voltage range 2.7V to 11V • Supply current per channel 1.25 mA • Small signal bandwidth 130 MHz • Input offset voltage (limit at 25°C) ±0.75 mV • Slew rate 55 V/μs • Settling time to 0.1% 9

DirectFET Power MOSFET

Description The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

RF AMPLIFIER MODEL

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N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

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General-Purpose Switching Device Applications

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Low Profile (0.7 mm)

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