P-Channel Enhancement Mode Fieid Effect Transistor

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NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-6A RDS(ON)

60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulato

60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulato

25A?? 60V, 0.030 Ohm, P-Channel Power MOSFET

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