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LM5109价格

参考价格：￥4.8157

型号：LM5109AMA/NOPB 品牌：TI 备注：这里有LM5109多少钱，2025年最近7天走势，今日出价，今日竞价，LM5109批发/采购报价，LM5109行情走势销售排行榜，LM5109报价。

型号	功能描述	生产厂家企业	LOGO
LM5109	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109	100V/1A 峰值半桥栅极驱动器	TI 德州仪器	TI
LM5109	100V/1A Peak Half Bridge Gate Driver 文件：733.33 Kbytes Page：14 Pages	TI 德州仪器	TI
LM5109	100V / 1A Peak Half Bridge Gate Driver 文件：657.32 Kbytes Page：9 Pages	NSC 国半	NSC
LM5109A	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109AMASLASHNOPB	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109AMASLASHNOPB.A	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109AMASLASHNOPB.B	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109AMAXSLASHNOPB	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109AMAXSLASHNOPB.A	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109AMAXSLASHNOPB.B	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109ASDSLASHNOPB	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109ASDSLASHNOPB.A	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109ASDSLASHNOPB.B	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109ASDXSLASHNOPB	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109ASDXSLASHNOPB.A	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109ASDXSLASHNOPB.B	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E	TI 德州仪器	TI
LM5109B	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109B	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BMASLASHNOPB	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BMASLASHNOPB.A	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BMASLASHNOPB.B	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BMAXSLASHNOPB	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BMAXSLASHNOPB.A	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BMAXSLASHNOPB.B	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109B-Q1	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109B-Q1	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BQNGTRQ1	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BQNGTRQ1.A	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BQNGTRQ1.B	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BQNGTTQ1	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BQNGTTQ1.A	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BQNGTTQ1.B	LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output	TI 德州仪器	TI
LM5109BSDSLASHNOPB	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BSDSLASHNOPB.A	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BSDSLASHNOPB.B	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BSDXSLASHNOPB	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BSDXSLASHNOPB.A	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109BSDXSLASHNOPB.B	LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri	TI 德州仪器	TI
LM5109MA/NOPB.A	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MA/NOPB.B	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MASLASHNOPB	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MASLASHNOPB.A	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MASLASHNOPB.B	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MAX/NOPB	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MAX/NOPB.A	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MAX/NOPB.B	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MAXSLASHNOPB	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MAXSLASHNOPB.A	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109MAXSLASHNOPB.B	LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •	TI 德州仪器	TI
LM5109A	具有 8V UVLO 的 1A、100V 半桥栅极驱动器	TI 德州仪器	TI
LM5109A	High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages	TI 德州仪器	TI
LM5109A	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 文件：796 Kbytes Page：16 Pages	TI 德州仪器	TI
LM5109A	High Voltage 1A Peak Half Bridge Gate Driver 文件：663.52 Kbytes Page：9 Pages	NSC 国半	NSC
LM5109A_16	High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages	TI 德州仪器	TI
LM5109AMA	High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages	TI 德州仪器	TI
LM5109AMA	LM5109A High Voltage 1A Peak Half Bridge Gate Driver 文件：796 Kbytes Page：16 Pages	TI 德州仪器	TI
LM5109AMA	High Voltage 1A Peak Half Bridge Gate Driver 文件：663.52 Kbytes Page：9 Pages	NSC 国半	NSC
LM5109AMA/NOPB	High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages	TI 德州仪器	TI
LM5109AMA/NOPB	封装/外壳：8-SOIC（0.154"，3.90mm 宽）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC）栅极驱动器	TI 德州仪器	TI

LM5109产品属性

类型
描述
型号
LM5109
制造商
NSC
制造商全称
National Semiconductor
功能描述
100V/1A Peak Half Bridge Gate Driver

LM5109供应商更多...

更新时间：2025-12-28 17:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	LM5109A	TI/德州仪器	24+	SOIC8	880000	明嘉莱只做原装正品现货	询价
深圳市得捷芯城科技有限公司	LM5109AMA	NS	24+	NA/	467	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市赛特兴科技有限公司	LM5109ASD/NOPB	TI	23+	WSON8	2000	正规渠道,只有原装!	询价
深圳航星空电子技术有限公司	LM5109AMA	TI(德州仪器)	23+	N/A	6000	公司只做原装，可来电咨询	询价
千层芯半导体(深圳)有限公司	LM5109AMA	NS	24+	原厂封装	5810	全新原装现货热卖,价格绝对优	询价
深圳市昂芯微科技有限公司	LM5109AMA	NSC	23+	SOP-8	7566	原厂原装	询价
中天科工半导体（深圳）有限公司	LM5109AMAX	TI/德州仪器	25+	SOP-8	32000	TI/德州仪器全新特价LM5109AMAX即刻询购立享优惠#长期有货	询价
深圳市赛尔通科技有限公司	LM5109AMA	NS	23+	SOP-8	65600		询价
深圳市英卓尔科技有限公司	LM5109AMA	NS	20+	SOP8	2960	诚信交易大量库存现货	询价
深圳市卓越微芯电子有限公司	LM5109AMA	NS	25+	SOP-8	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价

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LM5109规格书下载地址

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2020-4-18
LM5110-2SD/NOPB
LM4911LD TI/NS 19+ 5600 LM3658SD-A TI 19+ 5600 LM4811LDX TI/NS 19+ 5600 LM4970SDX TI/NS 19+ 5600 LM95234CISDX TI/NS 19+ 5600 LP3905SDX-A3 TI/NS 19+ 5600 LM26400YSDE TI 19+ 5600 LMH0384SQE TI 19+ 5600 LMH0394SQE TI 19+ 5600 LM27402SQX TI 19+ 5600 LMH0074SQE/NOPB TI 19+ 5600 LM4674TLX/NOPB
2019-9-6

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DdatasheetPDF页码索引