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LM5109价格
参考价格：￥4.8157
型号：LM5109AMA/NOPB 品牌：TI 备注：这里有LM5109多少钱，2025年最近7天走势，今日出价，今日竞价，LM5109批发/采购报价，LM5109行情走势销售排行榜，LM5109报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LM5109 | LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 |   | |
LM5109 | 100V / 1A Peak Half Bridge Gate Driver 文件：657.32 Kbytes Page：9 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | |
LM5109 | 100V/1A Peak Half Bridge Gate Driver 文件：733.33 Kbytes Page：14 Pages | TI 德州仪器 | | |
LM5109 | 100V/1A 峰值半桥栅极驱动器 | TI 德州仪器 | | |
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
LM5109A High Voltage 1A Peak Half Bridge Gate Driver 文件：796 Kbytes Page：16 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：663.52 Kbytes Page：9 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
LM5109A High Voltage 1A Peak Half Bridge Gate Driver 文件：796 Kbytes Page：16 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：663.52 Kbytes Page：9 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器 | TI2 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
LM5109A High Voltage 1A Peak Half Bridge Gate Driver 文件：796 Kbytes Page：16 Pages | TI 德州仪器 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器 | TI2 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：663.52 Kbytes Page：9 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
LM5109A High Voltage 1A Peak Half Bridge Gate Driver 文件：796 Kbytes Page：16 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：663.52 Kbytes Page：9 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
LM5109A High Voltage 1A Peak Half Bridge Gate Driver 文件：796 Kbytes Page：16 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：663.52 Kbytes Page：9 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：844.93 Kbytes Page：18 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
具有 8V UVLO 和高噪声抗扰度的 1A、100V 半桥栅极驱动器 | TI 德州仪器 | | ||
LM5109B High Voltage 1A Peak Half Bridge Gate Driver 文件：781.78 Kbytes Page：16 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | |
LM5109产品属性
- 类型
描述
- 型号
LM5109
- 制造商
NSC
- 制造商全称
National Semiconductor
- 功能描述
100V/1A Peak Half Bridge Gate Driver
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
标准封装 |
8048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
TI(德州仪器) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NS |
2016+ |
SOP8 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TI/德州仪器 |
23+ |
WSON8 |
4000 |
全新原装假一赔十 |
|||
NS/国半 |
22+ |
QFN |
100000 |
代理渠道/只做原装/可含税 |
|||
TI/德州仪器 |
25+ |
WSON8 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
NS |
23+ |
SOP-8 |
9823 |
||||
NS |
24+ |
SOP-8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NS |
25+23+ |
SOP-8 |
18031 |
绝对原装正品全新进口深圳现货 |
|||
NS |
25+ |
SOT23 |
18000 |
原厂直接发货进口原装 |
LM5109规格书下载地址
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