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LM5109B价格
参考价格：￥4.8157
型号：LM5109BMA/NOPB 品牌：TI 备注：这里有LM5109B多少钱，2025年最近7天走势，今日出价，今日竞价，LM5109B批发/采购报价，LM5109B行情走势销售排行榜，LM5109B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LM5109B | LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 |   | |
LM5109B | LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | |
LM5109B | 具有 8V UVLO 和高噪声抗扰度的 1A、100V 半桥栅极驱动器 | TI 德州仪器 | | |
LM5109B | High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSC 国半 | | |
LM5109B | High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | |
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri | TI 德州仪器 | | ||
LM5109B High Voltage 1A Peak Half Bridge Gate Driver 文件：781.78 Kbytes Page：16 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSC 国半 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器 | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSC 国半 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器 | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half Bridge Gate Driver 文件：755.51 Kbytes Page：22 Pages | TI 德州仪器 | | ||
具有 8V UVLO 和高抗扰度的汽车类 1A、100V 半桥栅极驱动器 | TI 德州仪器 | | ||
High Voltage 1-A Peak Half Bridge Gate Driver 文件：755.51 Kbytes Page：22 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half Bridge Gate Driver 文件：755.51 Kbytes Page：22 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSC 国半 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1A Peak Half Bridge Gate Driver 文件：272.89 Kbytes Page：10 Pages | NSC 国半 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
High Voltage 1-A Peak Half-Bridge Gate Driver 文件：1.39566 Mbytes Page：24 Pages | TI 德州仪器 | | ||
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Rheostat and Tap Switch Hardware Knobs, Dials, Mounting Fasteners | OHMITE | | ||
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LM5109B产品属性
- 类型
描述
- 型号
LM5109B
- 制造商
NSC
- 制造商全称
National Semiconductor
- 功能描述
High Voltage 1A Peak Half Bridge Gate Driver
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
标准封装 |
8048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
TI(德州仪器) |
24+ |
SOIC-8 |
17048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI/德州仪器 |
100000 |
代理渠道/只做原装/可含税 |
|||||
TI/德州仪器 |
22+ |
SOIC-8_150mil |
500000 |
原装现货支持实单价优/含税 |
|||
TI/德州仪器 |
23 |
明嘉莱只做原装正品现货 |
2510000 |
WSON8 |
|||
TI/德州仪器 |
2216+ |
WSON8 |
9900 |
原装正品假一罚十 |
|||
TI |
25+ |
WSON-8 |
6000 |
全新原装现货、诚信经营! |
|||
TI |
24+ |
SOP-8 |
5000 |
只做原装 有挂有货 假一赔十 |
|||
TI |
24+ |
DFN-8-EP |
30000 |
原装正品 支持实单 |
|||
TI/德州仪器 |
23+ |
SOIC8 |
18204 |
原装正品代理渠道价格优势 |
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LM5109B规格书下载地址
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