High-voltage switching diode

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丝印代码：LL245A；3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FEATURES · Members of the Texas Instruments Widebus™ Family · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation · Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) · Support Unregulated Battery Ope

丝印代码：LL245A；3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FEATURES · Members of the Texas Instruments Widebus™ Family · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation · Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) · Support Unregulated Battery Ope

丝印代码：LL245A；3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FEATURES · Members of the Texas Instruments Widebus™ Family · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation · Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) · Support Unregulated Battery Ope

丝印代码：LL245A；3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FEATURES · Members of the Texas Instruments Widebus™ Family · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation · Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) · Support Unregulated Battery Ope

丝印代码：LL245A；3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FEATURES · Members of the Texas Instruments Widebus™ Family · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation · Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) · Support Unregulated Battery Ope

丝印代码：LL245A；3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FEATURES · Members of the Texas Instruments Widebus™ Family · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation · Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) · Support Unregulated Battery Ope

丝印代码：LL245A；3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FEATURES · Members of the Texas Instruments Widebus™ Family · State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation · Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC) · Support Unregulated Battery Ope

3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

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3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

FAST SWITCHING DIODE

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FAST SWITCHING DIODE

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

VHF power MOS transistor

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