4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory

4M (512K 횞 8, 256K 횞 16) Flash Memory

INTRODUCTION Sharp’s LH28F400SU 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F400SU i

4M (512K 횞 8, 256K 횞 16) Flash Memory

INTRODUCTION Sharp’s LH28F400SU 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F400SU i

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory

4M Flash Memory

4M Flash Memory

4M Flash Memory

4M Flash Memory

4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory

4M (512K 횞 8, 256K 횞 16) Flash Memory

INTRODUCTION Sharp’s LH28F400SU-LC 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F400S

4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory

INTRODUCTION The data sheet is intended to give an overview of the chip feature-set and of the operating AC/DC specifications

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory

INTRODUCTION The data sheet is intended to give an overview of the chip feature-set and of the operating AC/DC specifications

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

4M Flash Memory

4Mbit(512Kbit x 8/256 Kbit x 16) 5V Single Voltage Flash Memory

4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY

文件：496.8 Kbytes Page：44 Pages

4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

文件：706.15 Kbytes Page：57 Pages

4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY

文件：559.94 Kbytes Page：50 Pages

4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

文件：457.11 Kbytes Page：36 Pages

4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY

文件：461.38 Kbytes Page：34 Pages