INTRODUCTION

Sharp’s LH28F400SU-LC 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28F400SU-LC is also the ideal choice for designing embedded mass storage flash memory systems.

DESCRIPTION

The LH28F400SU-LC is a high performance 4M (4,194,304 bit) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-LC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5.

FEATURES

• User-Configurable x8 or x16 Operation

• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC)

– No Requirement for DC/DC Converter to Write/Erase

• 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)

• Minimum 2.7 V Read Capability

– 190 ns Maximum Access Time (VCC = 2.7 V)

• 32 Independently Lockable Blocks (16K)

• 100,000 Erase Cycles per Block

• Automated Byte Write/Block Erase

– Command User Interface

– Status Register

– RY»/BY» Status Output

• System Performance Enhancement

– Erase Suspend for Read

– Two-Byte Write

– Full Chip Erase

• Data Protection - Hardware Erase/Write Lockout during Power Transitions

– Software Erase/Write Lockout

• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)

• 4 µA (Typ.) ICC in CMOS Standby

• 0.2 µA (Typ.) Deep Power-Down

• Extended Temperature Operation

– -40°C to +85°C

• State-of-the-Art 0.55 µm ETOX™ Flash Technology

• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package

• 48-Pin 1.2 mm × 12 mm × 18 mm TSOP (Type I) Package

• 44-Pin 600-mil SOP Package