DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,7A,RDS(ON)=26mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. ■-30V,-6A,RDS(ON)=38mΩ@VGS=-10V. RDS(ON)=57mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Le

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT6Ampere FEATURE ​​​​​​​*Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servo

AdvancedPMUforMarvellAspen

文件：91.74 Kbytes Page：2 Pages

AdvancedPMUforMarvellAspen

文件：1.00863 Mbytes Page：46 Pages

MiniatureCircularConnectors

文件：15.09519 Mbytes Page：40 Pages