Advanced PMU for Marvell Aspen

文件：91.74 Kbytes Page：2 Pages

Advanced PMU for Marvell Aspen

文件：1.00863 Mbytes Page：46 Pages

Advanced PMU for Marvell Aspen

Advanced PMU for Marvell Aspen

文件：1.00863 Mbytes Page：46 Pages

Advanced PMU for Marvell Aspen

文件：1.00863 Mbytes Page：46 Pages

Advanced PMU for Marvell Aspen

文件：1.00863 Mbytes Page：46 Pages

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. ■ -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Le

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 6 Ampere FEATURE ​​​​​​​* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo

Miniature Circular Connectors

文件：15.09519 Mbytes Page：40 Pages