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型号 功能描述 生产厂家 企业 LOGO 操作
LF155

LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

TI

德州仪器

LF155

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

LF155

Series Monolithic JFET Input Operational Amplifiers

文件:543.17 Kbytes Page:15 Pages

NSC

国半

LF155

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

STMICROELECTRONICS

意法半导体

LF155

JFET Input Operational Amplifiers

TI

德州仪器

LF155

JFET-Input Operational Amplifiers Low Supply Current

AD

亚德诺

LF155

JFET Input Operational Amplifiers

文件:2.37666 Mbytes Page:43 Pages

TI

德州仪器

LF155

LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers

文件:2.11476 Mbytes Page:32 Pages

TI

德州仪器

LF155

JFET Input Operational Amplifiers

文件:2.3774 Mbytes Page:43 Pages

TI

德州仪器

LF155

JFET Input Operational Amplifiers

文件:2.11476 Mbytes Page:32 Pages

TI

德州仪器

LF155

JFET-Input Operational Amplifiers Low Supply Current High Speed

文件:422.42 Kbytes Page:4 Pages

LINER

凌力尔特

LF155

JFET Input Operational Amplifiers

文件:1.07929 Mbytes Page:23 Pages

NSC

国半

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

STMICROELECTRONICS

意法半导体

JFET Input Operational Amplifiers

文件:2.3774 Mbytes Page:43 Pages

TI

德州仪器

JFET-Input Operational Amplifiers Low Supply Current High Speed

文件:422.42 Kbytes Page:4 Pages

LINER

凌力尔特

Series Monolithic JFET Input Operational Amplifiers

文件:543.17 Kbytes Page:15 Pages

NSC

国半

JFET-Input Operational Amplifiers Low Supply Current(LF155) High Speed(LF156)

文件:461.21 Kbytes Page:4 Pages

SYC

Series Monolithic JFET Input Operational Amplifiers

文件:543.17 Kbytes Page:15 Pages

NSC

国半

JFET-Input Operational Amplifiers Low Supply Current High Speed

文件:422.42 Kbytes Page:4 Pages

LINER

凌力尔特

JFET-Input Operational Amplifiers Low Supply Current High Speed

文件:422.42 Kbytes Page:4 Pages

LINER

凌力尔特

JFET Input Operational Amplifiers

文件:1.07929 Mbytes Page:23 Pages

NSC

国半

Series Monolithic JFET Input Operational Amplifiers

文件:543.17 Kbytes Page:15 Pages

NSC

国半

Series Monolithic JFET Input Operational Amplifiers

文件:543.17 Kbytes Page:15 Pages

NSC

国半

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

PHILIPS

飞利浦

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

PANASONIC

松下

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package

NEC

瑞萨

LF155产品属性

  • 类型

    描述

  • 型号

    LF155

  • 制造商

    NSC

  • 制造商全称

    National Semiconductor

  • 功能描述

    JFET Input Operational Amplifiers

更新时间:2026-3-17 19:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARRIS
专业铁帽
CAN8
67500
铁帽原装主营-可开原型号增税票
NS
24+
CAN
200
进口原装正品优势供应
1
TITAN OPTO
9812
92
ADI/亚德诺
2425+
N/A
25000
只做原装正品,每一片都来自原厂
LF155H/883B
25+
1
1
LT
25+
CAN
30000
代理全新原装现货,价格优势
NS
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
NS
26+
SOT23
890000
一级总代理商原厂原装大批量现货 一站式服务
NS/美国国半
2450+
CAN8
8850
只做原装正品假一赔十为客户做到零风险!!
TI
22+
5000
只做原装鄙视假货15118075546

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