位置:首页 > IC中文资料第6667页 > LF155
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LF155 | LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | ||
LF155 | WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | ||
LF155 | Series Monolithic JFET Input Operational Amplifiers 文件:543.17 Kbytes Page:15 Pages | NSC 国半 | ||
LF155 | WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS | STMICROELECTRONICS 意法半导体 | ||
LF155 | JFET Input Operational Amplifiers | TI 德州仪器 | ||
LF155 | JFET-Input Operational Amplifiers Low Supply Current | AD 亚德诺 | ||
LF155 | JFET Input Operational Amplifiers 文件:2.37666 Mbytes Page:43 Pages | TI 德州仪器 | ||
LF155 | LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers 文件:2.11476 Mbytes Page:32 Pages | TI 德州仪器 | ||
LF155 | JFET Input Operational Amplifiers 文件:2.3774 Mbytes Page:43 Pages | TI 德州仪器 | ||
LF155 | JFET Input Operational Amplifiers 文件:2.11476 Mbytes Page:32 Pages | TI 德州仪器 | ||
LF155 | JFET-Input Operational Amplifiers Low Supply Current High Speed 文件:422.42 Kbytes Page:4 Pages | LINER 凌力尔特 | ||
LF155 | JFET Input Operational Amplifiers 文件:1.07929 Mbytes Page:23 Pages | NSC 国半 | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | |||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | |||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | |||
JFET Input Operational Amplifiers 文件:2.3774 Mbytes Page:43 Pages | TI 德州仪器 | |||
JFET-Input Operational Amplifiers Low Supply Current High Speed 文件:422.42 Kbytes Page:4 Pages | LINER 凌力尔特 | |||
Series Monolithic JFET Input Operational Amplifiers 文件:543.17 Kbytes Page:15 Pages | NSC 国半 | |||
JFET-Input Operational Amplifiers Low Supply Current(LF155) High Speed(LF156) 文件:461.21 Kbytes Page:4 Pages | SYC | |||
Series Monolithic JFET Input Operational Amplifiers 文件:543.17 Kbytes Page:15 Pages | NSC 国半 | |||
JFET-Input Operational Amplifiers Low Supply Current High Speed 文件:422.42 Kbytes Page:4 Pages | LINER 凌力尔特 | |||
JFET-Input Operational Amplifiers Low Supply Current High Speed 文件:422.42 Kbytes Page:4 Pages | LINER 凌力尔特 | |||
JFET Input Operational Amplifiers 文件:1.07929 Mbytes Page:23 Pages | NSC 国半 | |||
Series Monolithic JFET Input Operational Amplifiers 文件:543.17 Kbytes Page:15 Pages | NSC 国半 | |||
Series Monolithic JFET Input Operational Amplifiers 文件:543.17 Kbytes Page:15 Pages | NSC 国半 | |||
Low-voltage variable capacitance diode DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta | PHILIPS 飞利浦 | |||
GaAs Infrared Light Emitting Diode GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package | PANASONIC 松下 | |||
L-BAND SPDT SWITCH DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package | NEC 瑞萨 |
LF155产品属性
- 类型
描述
- 型号
LF155
- 制造商
NSC
- 制造商全称
National Semiconductor
- 功能描述
JFET Input Operational Amplifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
专业铁帽 |
CAN8 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
NS |
24+ |
CAN |
200 |
进口原装正品优势供应 |
|||
1 |
TITAN OPTO |
9812 |
92 |
||||
ADI/亚德诺 |
2425+ |
N/A |
25000 |
只做原装正品,每一片都来自原厂 |
|||
LF155H/883B |
25+ |
1 |
1 |
||||
LT |
25+ |
CAN |
30000 |
代理全新原装现货,价格优势 |
|||
NS |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
NS |
26+ |
SOT23 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
NS/美国国半 |
2450+ |
CAN8 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI |
22+ |
5000 |
只做原装鄙视假货15118075546 |
LF155规格书下载地址
LF155参数引脚图相关
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- LF157N
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- LF156N
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- LF156H883C
- LF156H883
- LF156H/NOPB
- LF156H/883C
- LF156H/883
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- LF155H/883
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LF155数据表相关新闻
LF2005-S
公司原装型号 价格优势 绝对诚信
2022-4-22LF347N
LF347N,全新原装当天发货或门市自取0755-82732291.
2019-12-23LEM传感器-IT系列高精度传感器使用指导
IT(ITN, ITB,IT,ITL,ITC,IN)系列高精度传感器基于磁通门原理,在实验室、测试设备和需要高精度测量的工业应用中提供了非常优秀的测量方案,测量电流范围可以覆盖 12A 到4000A。 如果有任何疑问请及时联系 LEM 获得帮助。
2019-10-10LESD8L3.3CT5G瞬态抑制器原装正品
保证最优惠的价格,薄利多销为经营理念;_ 服务:最快捷的交货方式,货品均有30天质量保证
2019-8-28LF347N公司大量原装正品现货/长期供应
LF347N公司大量原装正品现货/长期供应
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2019-3-21
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