RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条成形引线） 包装：托盘 描述：TRANSISTOR RF POWER N-CH 80V 9A 分立半导体产品 晶体管 - FET，MOSFET - 射频

45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source m

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent ga

封装/外壳：M250 包装：托盘 描述：FET RF LDMOS 80V 9A M-250 分立半导体产品 晶体管 - FET，MOSFET - 射频

45W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

文件：202.3 Kbytes Page：10 Pages

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes Page：12 Pages

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes Page：12 Pages

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes Page：12 Pages

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