45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

• In compliance with the 2002/95/EC european directive\n• Excellent thermal stability\n• POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V• Common source configuration\n• ESD protection\n• Plastic package;

封装/外壳：PowerSO-10RF 裸露底部焊盘（2 条成形引线） 包装：托盘 描述：TRANSISTOR RF POWER N-CH 80V 9A 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source m

45W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package

The LET9045F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045F is designed for high gain and broadband performance operating in common source mode at 28 V. It • Excellent thermal stability\n• Common source configuration\n• POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz• POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz\n• BeO free package\n• In compliance with the 2002/95/EC European directive;

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent ga

电磁贴片蜂鸣器

遥控器贴片蜂鸣器LET9045CS尺寸小,便于安装。主要应用于遥控器，呼吸机等。

封装/外壳：M250 包装：托盘 描述：FET RF LDMOS 80V 9A M-250 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

文件：202.3 Kbytes Page：10 Pages

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes Page：12 Pages

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes Page：12 Pages

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes Page：12 Pages

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

T1/E1/OC3 System Synchronizer

Description The MT9045 T1/E1/OC3 System Synchronizer contains a digital phase-locked loop (DPLL), which provides timing and synchronization signals for multitrunk T1 and E1 primary rate transmission links and STS-3/OC3 links. The MT9045 generates ST-BUS clock and framing signals that are

Dual Synchronous DC/DC converter controller

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VIDEO PROCESSOR AND INPUT SELECTOR

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