RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source m

封装/外壳：M243 包装：托盘 描述：MOSFET N-CH 80V 9A M-250 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent ga

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

T1/E1/OC3 System Synchronizer

Description The MT9045 T1/E1/OC3 System Synchronizer contains a digital phase-locked loop (DPLL), which provides timing and synchronization signals for multitrunk T1 and E1 primary rate transmission links and STS-3/OC3 links. The MT9045 generates ST-BUS clock and framing signals that are

Dual Synchronous DC/DC converter controller

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VIDEO PROCESSOR AND INPUT SELECTOR

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