丝印代码：LDHT245；SN74LVCH16T245 16-bit Dual-supply Bus Transceiver With Configurable Level-Shifting/Voltage Translation and Tri-State Outputs

1 Features 1• Control Inputs VIH/VIL Levels are Referenced to V CCA Voltage • VCC Isolation Feature – If Either VCC Input is at GND, All Outputs are in the High-Impedance State • Overvoltage-Tolerant Inputs and Outputs Allow Mixed-Voltage-Mode Data Communications • Fully Configurable Dual-R

丝印代码：LDHT245；SN74LVCH16T245 16-bit Dual-supply Bus Transceiver With Configurable Level-Shifting/Voltage Translation and Tri-State Outputs

1 Features 1• Control Inputs VIH/VIL Levels are Referenced to V CCA Voltage • VCC Isolation Feature – If Either VCC Input is at GND, All Outputs are in the High-Impedance State • Overvoltage-Tolerant Inputs and Outputs Allow Mixed-Voltage-Mode Data Communications • Fully Configurable Dual-R

丝印代码：LDHT245；SN74LVCH16T245 16-bit Dual-supply Bus Transceiver With Configurable Level-Shifting/Voltage Translation and Tri-State Outputs

1 Features 1• Control Inputs VIH/VIL Levels are Referenced to V CCA Voltage • VCC Isolation Feature – If Either VCC Input is at GND, All Outputs are in the High-Impedance State • Overvoltage-Tolerant Inputs and Outputs Allow Mixed-Voltage-Mode Data Communications • Fully Configurable Dual-R

丝印代码：LDHT245；SN74LVCH16T245 16-bit Dual-supply Bus Transceiver With Configurable Level-Shifting/Voltage Translation and Tri-State Outputs

1 Features 1• Control Inputs VIH/VIL Levels are Referenced to V CCA Voltage • VCC Isolation Feature – If Either VCC Input is at GND, All Outputs are in the High-Impedance State • Overvoltage-Tolerant Inputs and Outputs Allow Mixed-Voltage-Mode Data Communications • Fully Configurable Dual-R

16-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS

文件：365.29 Kbytes Page：15 Pages

16-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

N-channel silicon field-effect transistors

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