PEN-PET H.T

文件：499.29 Kbytes Page：8 Pages

Film Capacitors

Film Capacitors

封装/外壳：1206（3216 公制） 包装：散装 描述：CAP FILM 1200PF 10% 50VDC 1206 电容器 薄膜电容器

LDE, Film, Metallized PEN Stacked, Automotive Grade, 1200 pF, 10, 50 V, 40 VAC, 125C, 1206, 1.1mm

文件：59.85 Kbytes Page：1 Pages

LDE, Film, Metallized PEN Stacked, Automotive Grade, 1200 pF, 20, 50 V, 40 VAC, 125C, 1206, 1.1mm

文件：59.85 Kbytes Page：1 Pages

封装/外壳：1206（3216 公制） 包装：卷带（TR） 描述：CAP FILM 1200PF 20% 50VDC 1206 电容器 薄膜电容器

Film Capacitors

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Optocoupler with Phototransistor Output

Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

P-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor controls □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

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N-Channel Enhancement-Mode Vertical DMOS Power FETs???

文件：136.07 Kbytes Page：4 Pages