GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

GaAs Infrared Emitter

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● Wide beam ● Same package as BP 103, BPX 63, SFH 464, SFH 483 ● DIN humidity category in acc. with DIN 40 040 GQG Applications ● IR r

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Wide beam • Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc. with DIN 40 040 GQG Applications • Photointerrupters • Sensor tech

24G移动和微动检测雷达

LD24

文件：632.8 Kbytes Page：4 Pages

LD24-xx-xxW

文件：614.22 Kbytes Page：4 Pages

LD24

文件：632.8 Kbytes Page：4 Pages

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

POWER TRANSISTORS(3A,40W)