POWER TRANSISTORS(3A,40W)

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTOR

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS

PNP SILICON EPITAXIAL BASE POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD241/A/B/C APPLICATIONS • For medium power linear and switching applications

Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain -hFE = 25(Min)@ IC= -1.0A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C • Complement to Type BD241/A/B/C APPLICATIONS • Designed for use in general purpose power a

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively

COMPLEMENTARY SILICON PLASTIC

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD241, A, B, C. Compliance to RoHS.

Silicon NPN Power Transistors

文件：92.1 Kbytes Page：3 Pages

Transistor

Ultra Low Profile 0404 Balun for TI transceiver CC2500 50. to 127j34. Balanced

Description The BD2425N50ATI is a low cost, low profile sub-miniature unbalanced to balanced transformer designed for differential inputs and output locations on modern chipsets in an easy to use surface mount package. The BD2425N50ATI is ideal for high volume manufacturing and delivers higher pe

Ultra Low Profile 0404 Balun For nRF24L01 and nRF24L01

Description The BD2425NnRF is a low cost, low profile sub-miniature unbalanced to balanced transformer designed for differential inputs and output, tuned to provide optimal performance in tandem with the Nordic Semiconductor nRF24L01 and nRF24L01+. The BD2425NnRF is ideal for high volume manufact

Ultra Low Profile 0404 Balun For nRF24L01 and nRF24L01

Description The BD2425NnRF is a low cost, low profile sub-miniature unbalanced to balanced transformer designed for differential inputs and output, tuned to provide optimal performance in tandem with the Nordic Semiconductor nRF24L01 and nRF24L01+. The BD2425NnRF is ideal for high volume manufact

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD241/A/B/C APPLICATIONS • For medium power linear and switching applications

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A,BD242B and BD242C respectively. ■ STMicroelectronics

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD241, A, B, C. Compliance to RoHS.

PNP SILICON EPITAXIAL BASE POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS

PNP SILICON POWER TRANSISTOR

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

POWER TRANSISTORS(3A,40W)

isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain -hFE = 25(Min)@ IC= -1.0A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C • Complement to Type BD241/A/B/C APPLICATIONS • Designed for use in general purpose power a

COMPLEMENTARY SILICON PLASTIC

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively

PNP SILICON POWER TRANSISTOR

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A,BD242B and BD242C respectively. ■ STMicroelectronics

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON EPITAXIAL BASE POWER TRANSISTORS

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD241/A/B/C APPLICATIONS • For medium power linear and switching applications

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD241, A, B, C. Compliance to RoHS.

isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain -hFE = 25(Min)@ IC= -1.0A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C • Complement to Type BD241/A/B/C APPLICATIONS • Designed for use in general purpose power a

COMPLEMENTARY SILICON PLASTIC

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON POWER TRANSISTORS

NPN --> BD241BFP PNP --> BD242BFP DESCRIPTION The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP. ■ STMicroelectronics PREFERREDSALEST

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

PNP SILICON POWER TRANSISTOR

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

POWER TRANSISTORS COMPLEMENTARY SILICON

BD241C (NPN) BD242B (PNP) BD242C (PNP) Features • High Current Gain −Bandwidth Product • Compact TO−220 AB Package • Epoxy Meets UL94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant*

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A,BD242B and BD242C respectively. ■ STMicroelectronics

POWER TRANSISTORS(3A,40W)

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD241 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD241/A/B/C APPLICATIONS • For medium power linear and switching applications

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

The BD242, A, B, C are the PNP transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD241, A, B, C. Compliance to RoHS.

COMPLEMENTARY SILICON PLASTIC

isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain -hFE = 25(Min)@ IC= -1.0A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C • Complement to Type BD241/A/B/C APPLICATIONS • Designed for use in general purpose power a

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Ultra Low Profile 0805 Balun

文件：213.49 Kbytes Page：5 Pages